Novel high-k mask absorber for next generation EUV lithography

Abstract

Currently various materials are being tested as new EUV mask absorber for next-generation EUV lithography. The materials can roughly be divided into two groups: low-n and high-k. In order to determine what material to use, various properties such as wafer printability and mask process needs to be considered. In this work, wafer printability of low-n and high-k material was compared with current tantalum based conventional absorber by simulation. Material chosen from the n & k value showing promising results in the simulation where tested for durability in mask usage condition. Also, the chosen material was patterned with conventional tool applied for current photomask process, testing the etchability and resolution with temporal process used for initial testing.