Multibeam mask requirements for advanced EUV patterning

Multibeam mask writers (MBMW) from IMS Nanofabrication developed in the last decade are currently being used for leading edge mask patterning. The ability to utilize low sensitivity resists required to pattern complex mask patterns with good edge placement control made MBMW the tool of choice for leading edge extreme ultraviolet (EUV) mask patterning. The next generation of High-NA EUV masks will require smaller features, more complex figures and reduction of edge placement errors. These requirements may exceed the capability of the current MBMW tools. Recently IMS announced the next generation MBMW tools to address this challenge. This paper will explore the effectiveness of the proposed improvements on addressing High-NA EUV mask patterning challenges.