Analysis of thin chrome on photomasks

Robert Kostelak
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Abstract

"Thin chrome" is a major cause for the rejection of photomasks during their fabrication process. This paper will characterize this phenomenon and identify a working solution to the problem. The thinned regions in chrome are characterized by -100 |xm wide isolated depressions which are detected by visual inspection under an optical microscope. Analysis of the chromium surface using AES and EDXA showed no chemical contamination or inclusions which could be responsible for the thinned chrome. Thin chrome is observed more frequently on plates from Vendor one than from Vendor two. Observations of the removal of the chromium from the glass substrate suggest that the stress gradient within the Vendor one chromium is greater than the Vendor two chromium. ESC A revealed two distinct chemical state of nitrogen present within Vendor l’s chromium film. However, using TEM, the grain structure of chromium from both Vendor one and Vendor two was found to be fine and uniform. The occurrence of thin chrome has been associated with the presence of chromic acid in the resist stripping solution. An alternative sulfuric acid: hydrogen peroxide solution can successfully strip e-beam resist without attacking the chromium mask.
分析光掩膜上的薄铬
"薄铬 "是光掩膜在制造过程中出现废品的一个主要原因。本文将分析这一现象的特征,并找出解决问题的可行方案。铬薄区域的特征是-100 |xm宽的孤立凹陷,可通过光学显微镜下的目视检查检测到。使用 AES 和 EDXA 对铬表面进行的分析表明,没有可能导致铬变薄的化学污染或夹杂物。与供应商 2 相比,在供应商 1 的钢板上更常观察到铬变薄的现象。对铬从玻璃基板上脱落的观察表明,供应商一铬内部的应力梯度大于供应商二铬。电解 A 显示,供应商一的铬膜中存在两种不同化学状态的氮。然而,使用 TEM 技术发现,供应商 1 和供应商 2 的铬的晶粒结构都很细腻、均匀。薄铬的出现与抗蚀剂剥离溶液中含有铬酸有关。另一种硫酸:过氧化氢溶液可成功剥离电子束光刻胶,而不会损坏铬掩膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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