GMC: a negative acting resist used in the fabrication of chromium photomasks

A. E. Novembre, L. M. Kowalski, J. Frackoviak, D. A. Mixon, L. F. Thompson
{"title":"GMC: a negative acting resist used in the fabrication of chromium photomasks","authors":"A. E. Novembre, L. M. Kowalski, J. Frackoviak, D. A. Mixon, L. F. Thompson","doi":"10.1117/12.3011932","DOIUrl":null,"url":null,"abstract":"GMC is a random amorphous co-polymer of glycidyl methacrylate and 3- chlorostyrene. The material functions as a negative acting (cross-linking type) electron beam resist. Its sensitivity, defined as the dose necessary to gel 50% of the initial film thickness (Dq0.5), is 1.5 and 3.1 uC/cm2 @ 10 and 20 kV, respectively. No post exposure curing is required for device codes that allow line-width tolerances of > +/- 0.10 um. A methodology has been developed for determining a thermodynamically marginal developer (solvent) which minimizes swelling of the defined features, and improves process control associated with the spray/spin development step. The use of this method has led to an improvement in resolution over that obtained with conventional 2-component developers. Vertical 0.75 um line and space patterns are routinely delineated, and features in the 0.5 um range can be obtained. The material exhibits enhanced dry etching resistance when compared to methacrylate based (OOP, PGMA) negative resists, and is compatible with both wet and dry etching methods utilized in the patterning of the chromium layer. Production scale quantities are not routinely produced. A batch to batch comparison of the critical molecular and lithographic properties indicates deviations of < 5 percent. Statistical data derived from product related IX photomasks reveals an average calculated line width uniformity (3 sigma) and line edge roughness (6 sigma) of 0.027 um and 0.064 um, respectively. This represents 100% improvement in feature size quality, and control over COP, and is equivalent to that observed with PBS patterned masks. Pinhole defects are virtually nonexistent, and defect densities under 0.2/cm2 are observed.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"92 1","pages":"1281108 - 1281108-17"},"PeriodicalIF":0.0000,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photomask Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.3011932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

GMC is a random amorphous co-polymer of glycidyl methacrylate and 3- chlorostyrene. The material functions as a negative acting (cross-linking type) electron beam resist. Its sensitivity, defined as the dose necessary to gel 50% of the initial film thickness (Dq0.5), is 1.5 and 3.1 uC/cm2 @ 10 and 20 kV, respectively. No post exposure curing is required for device codes that allow line-width tolerances of > +/- 0.10 um. A methodology has been developed for determining a thermodynamically marginal developer (solvent) which minimizes swelling of the defined features, and improves process control associated with the spray/spin development step. The use of this method has led to an improvement in resolution over that obtained with conventional 2-component developers. Vertical 0.75 um line and space patterns are routinely delineated, and features in the 0.5 um range can be obtained. The material exhibits enhanced dry etching resistance when compared to methacrylate based (OOP, PGMA) negative resists, and is compatible with both wet and dry etching methods utilized in the patterning of the chromium layer. Production scale quantities are not routinely produced. A batch to batch comparison of the critical molecular and lithographic properties indicates deviations of < 5 percent. Statistical data derived from product related IX photomasks reveals an average calculated line width uniformity (3 sigma) and line edge roughness (6 sigma) of 0.027 um and 0.064 um, respectively. This represents 100% improvement in feature size quality, and control over COP, and is equivalent to that observed with PBS patterned masks. Pinhole defects are virtually nonexistent, and defect densities under 0.2/cm2 are observed.
GMC:用于制造铬光罩的负作用抗蚀剂
GMC 是甲基丙烯酸缩水甘油酯和 3-氯苯乙烯的无规无定形共聚物。这种材料是一种负作用(交联型)电子束抗蚀剂。其灵敏度(定义为凝胶初始薄膜厚度 50%(Dq0.5)所需的剂量)在 10 kV 和 20 kV 下分别为 1.5 和 3.1 uC/cm2。对于允许线宽公差大于 +/- 0.10 um 的设备代码,无需曝光后固化。目前已开发出一种方法,用于确定热力学边缘显影剂(溶剂),以最大限度地减少已定义特征的膨胀,并改进与喷雾/旋转显影步骤相关的工艺控制。与传统的双组分显影剂相比,这种方法提高了分辨率。垂直 0.75 微米的线条和空间图案已被常规划定,并可获得 0.5 微米范围内的特征。与基于甲基丙烯酸酯(OOP、PGMA)的阴极抗蚀剂相比,该材料具有更强的耐干蚀刻性,并且与铬层图案化中使用的湿法和干法蚀刻方法兼容。生产规模的量产并不常见。关键分子和光刻特性的批次间比较表明,偏差小于 5%。从与 IX 光掩模相关的产品中得出的统计数据显示,计算得出的平均线宽均匀度(3 西格玛)和线边缘粗糙度(6 西格玛)分别为 0.027 微米和 0.064 微米。这表明特征尺寸质量和 COP 控制得到了 100% 的改善,与 PBS 图形掩膜观察到的结果相当。针孔缺陷几乎不存在,缺陷密度低于 0.2/cm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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