2005 6th International Conference on Electronic Packaging Technology最新文献_第2页

Numerical modelling for electronic packaging - future requirements 电子封装用数值模拟。未来要求

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564645

C. Bailey

引用次数: 5

Fabrication and properties of SiC/Cu composites for electronic packaging 电子封装用SiC/Cu复合材料的制备及性能研究

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564679

Dezhi Zhu, Gaohui Wu, Guo-qin Chen, Qiang Zhang

引用次数: 7

Design and simulation of SIP for RF system 射频系统SIP的设计与仿真

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564640

Liu Lin-tao, Yu Ming-yan, Ye Yi-zheng, W. Jin-xiang

引用次数: 1

Molecular dynamics (MD) simulation of uniaxial tension of /spl beta/-Sn single crystals with nanocracks 带有纳米裂纹的/spl β /-Sn单晶单轴张力的分子动力学模拟

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564654

Weiqiang Wang, Ying Ding, Chunqing Wang

引用次数: 2

The influence of element-Ni on interfacial reactions between lead-free Sn-Ag-Cu and Cu substrate 元素ni对无铅Sn-Ag-Cu与Cu衬底界面反应的影响

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564682

Lifeng Wang, F. Sun, Ying Liang, Miaosen Yang

{"title":"The influence of element-Ni on interfacial reactions between lead-free Sn-Ag-Cu and Cu substrate","authors":"Lifeng Wang, F. Sun, Ying Liang, Miaosen Yang","doi":"10.1109/ICEPT.2005.1564682","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564682","url":null,"abstract":"The formation and growth of intermetallic compounds (IMC) is a key factor to the reliability of soldering joints in modern electronic mounting and packaging industry. In this work, Sn-3.8Ag-0.5Cu, Sn-3.8Ag-0.5Cu-0.1Ni lead-free solders were prepared using vacuum equipment. The influence of element-Ni on interfacial reactions between Sn-3.8Ag-0.5Cu and Cu during soldering as well as on IMCs behavior during aging was studied. When soldered, the Sn-3.8Ag-0.5Cu-0.1Ni/Cu IMC layer was much thicker than that of Sn-3.8Ag-0.5Cu/Cu; by calculating the metastable phase equilibria and comparing the driving forces of formation of individual IMC, the compounds sequence and reaction path at solder/copper interface were predicted through Thermo Calc software which is based upon CALPHAD method. The results showed that the compound which formed first was Cu/sub 6/Sn/sub 5/, then Cu/sub 3/Sn. The microstructure of the joint was also identified by means of Olympus, scanning electron microscope (SEM) and energy dispersive X-ray (EDX) analysis methods, the addition of Ni made IMC of SnAgCu/Cu turn into (Cu, Ni)/sub 6/Sn/sub 5/. The results from thermodynamic calculation are in good agreement with the experiments. When 130/spl deg/C aged, the total IMC layer of SnAgCu/Cu solder joint thickened with the increasing of aging time. The thickness of IMC layer has straight-line relation to square root of time, which accords with the rule of parabola; while (Cu,Ni)/sub 6/Sn/sub 5/ layer of the SnAgCu-0.1Ni/Cu solder joint appear greater stabilities during aging.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115602583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of unfilled underfill on drop test and thermal cycle reliability 未充填下填料对跌落试验及热循环可靠性的影响

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564728

E. Ibe, K. Loh, J. Luan, T. Y. Tee

引用次数: 1

The application of RSM in optimization of the curing profile for electronic packaging polymers RSM在电子封装聚合物固化轮廓优化中的应用

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564638

Fuhong Huang, Yu-bing Gong, Quanyong Li, Daoguo Yang

引用次数: 0

Study on Angle Deviation for Coupling Loss in Fiber Collimator Packaging 光纤准直器封装耦合损耗角偏差研究

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564630

Qiu Jianxin, He Feng

引用次数: 8

Interfacial reactions between Pb-free solders and metallized substrate surfaces 无铅焊料与金属化衬底表面之间的界面反应

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564636

Dezhi Li, Changqing Liu, P. Conway

{"title":"Interfacial reactions between Pb-free solders and metallized substrate surfaces","authors":"Dezhi Li, Changqing Liu, P. Conway","doi":"10.1109/ICEPT.2005.1564636","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564636","url":null,"abstract":"The interfacial reactions and the resultant intermetallics between lead free solders, i.e., Sn-3.8Ag-0.7Cu, Sn-3.5Ag and Sn-0.7Cu, and substrates with different metallisation, namely, Cu, electroless Ni (EN), immersion Ag on Cu (CuImAg) and electroless Ni immersion gold (ENIG), were investigated after multiple reflows and subsequent ageing. For Cu and CuImAg substrates, the intermetallic compounds (IMCs) Cu/sub 3/Sn and Cu/sub 6/Sn/sub 5/ formed at the interface were identified, compared to Ni/sub 3/Sn/sub 4/ IMC in the case of EN or ENIG substrates reacting with Sn-3.5Ag. However, for EN or ENIG substrates, when using Sn-3.8Ag-0.7Cu and Sn-0.7Cu solders, the IMCs formed at the interface was (Cu,Ni) /sub 6/Sn/sub 5/. It has been revealed that the growth of Cu/sub 6/Sn/sub 5/ was faster than that of (Cu,Ni) /sub 6/Sn/sub 5/ and Ni/sub 3/Sn/sub 4/, which indicates the introduction of Ni into the Cu/sub 6/Sn/sub 5/ IMC may provide an optimised solution to enable the stability of the interfaces formed during soldering. As for the morphology of the IMCs, when they formed at the interface, the (Cu,Ni) /sub 6/Sn/sub 5/ IMCs were needle- or facet-like, the Cu/sub 6/Sn/sub 5/ and Ni/sub 3/Sn/sub 4/ IMCs were facet-like and Ag/sub 3/Sn IMCs were plate- or pebble- or needle-like. In the solder, the Cu/sub 6/Sn/sub 5/ IMC had prism-like shape with some of them appearing hollow with the Ag/sub 3/Sn IMCs embedded inside. Kirkendall voids were found in the Cu/sub 3/Sn and Ni/sub 3/P layers, and the formation of Kirkendall voids in the Cu/sub 3/Sn layer is likely related to the immersion Ag surface finish.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126893833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Characterization of copper-to-silicon diffusion for the application of 3D packaging with through silicon vias 硅通孔三维封装中铜到硅扩散的表征

2005 6th International Conference on Electronic Packaging Technology Pub Date : 2005-08-30 DOI: 10.1109/ICEPT.2005.1564666

S. Zhang, S. Lee, L. Weng, S. So

{"title":"Characterization of copper-to-silicon diffusion for the application of 3D packaging with through silicon vias","authors":"S. Zhang, S. Lee, L. Weng, S. So","doi":"10.1109/ICEPT.2005.1564666","DOIUrl":"https://doi.org/10.1109/ICEPT.2005.1564666","url":null,"abstract":"Through silicon vias (TSVs) are one of the major enabling technologies for three-dimensional packaging (3DP). TSVs are usually plugged with plated copper for interconnection. However, the introduction of massive copper in the chip may cause device failure due to the fast diffusion of copper into silicon. In order to reduce this risk, a diffusion barrier layer should be deposited on the sidewall of TSVs between the plated copper and the bulk silicon. In addition, an insulation layer should be deposited as well to prevent short circuit. In this paper, the phenomenon of copper-to-silicon diffusion is characterized. The selected interfacial multilayer structure is Cu/Ti/SiO/sub 2/. Although the ideal specimens should be TSVs with interfacial multilayer deposited on the side wall, it is rather difficult to perform surface analysis on a very small area. Therefore, planar analysis with interfacial multilayer deposited on the top surface of a silicon wafer is performed instead. For comparison purpose, additional cases without insulation layer and/or barrier layer are also investigated. A set of experiments is designed to study the effects of surface roughness and layer thickness. In addition, some samples are subject to high temperature storage for the study of thermal annealing effect.","PeriodicalId":234537,"journal":{"name":"2005 6th International Conference on Electronic Packaging Technology","volume":"233 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8