1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers最新文献

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A 350MHz-14GHz GaAs MESFET amplifier using feedback 采用反馈的350MHz-14GHz GaAs MESFET放大器
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156054
K. Niclas, W. Wilser, R. Gold, W. Hitchens
{"title":"A 350MHz-14GHz GaAs MESFET amplifier using feedback","authors":"K. Niclas, W. Wilser, R. Gold, W. Hitchens","doi":"10.1109/ISSCC.1980.1156054","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156054","url":null,"abstract":"A single-ended amplifier module using negative and positive feedback, producing a minimum gain of 4dB at 20mW in the 350MHz-14GHz range will be covered.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"460 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133489139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A numerical analysis for very small semiconductor devices 非常小的半导体器件的数值分析
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156086
A. Yoshii, S. Horiguchi, T. Sudo
{"title":"A numerical analysis for very small semiconductor devices","authors":"A. Yoshii, S. Horiguchi, T. Sudo","doi":"10.1109/ISSCC.1980.1156086","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156086","url":null,"abstract":"WITH THE REDUCTIOX in device sizes, accurate numerical analysese are becoming acutely important. This paper will report on a device simulation, including three-dimensional transport, consisting of continuity equations for holes and electrons and Poisson’s equation. Both recombination and high doping effects’ are included. The nonlinear equations are linearized by an algorithm proposed earlier2. Two numerical analysis methods have been available; the finite-element method ( FEM)3’4 and the finitedifference method (FDM). In FEM, the total number of nodes ( n ) can be made smaller than that in the FDM as the result of local element refinement. The method of solving the resulting matrix is, however, limited to a direct technique by which the memory area requirement increases rapidly in proportion to nk (k > 1). In FDRl the matrix having a band structure is formed by using a grid-like mesh. A special relaxation algorithm making full use of its regularity is available; thus, the required memory area can be considerably smaller than that for the FEM. The finite difference formulation will be discussed, noting that the resulting matrix can be solved by the relaxation method in which the strongly implicit algorithm’ is extended to three dimensions. Non-uniform grids, determined according to the impurity profile gradient, are used to minimize the number of nodes and numerical errors. Through these calculations, the carrier concentrations and the potential and current distributions can be obtained. The quantities on any cross section can also be visualized graphically.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133676752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A Gb MOS logic circuit with buried channel MOSFETs 一种埋入沟道mosfet的Gb MOS逻辑电路
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/isscc.1980.1156097
K. Nishiuchi, H. Shibayama, T. Nakamura, T. Hisatsugu, Y. Fukukawa
{"title":"A Gb MOS logic circuit with buried channel MOSFETs","authors":"K. Nishiuchi, H. Shibayama, T. Nakamura, T. Hisatsugu, Y. Fukukawa","doi":"10.1109/isscc.1980.1156097","DOIUrl":"https://doi.org/10.1109/isscc.1980.1156097","url":null,"abstract":"A buried-channel MOS frequency divider using 1μm design and fabricated by dry processes with electron-beam made masks will be reported. Gb frequency division and sub 100ps switching delay have been obtained.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114701049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 200ns 150mW 64K HMOS EPROM 一个200ns 150mW 64K HMOS EPROM
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156042
S. Smith, J. Yeargain
{"title":"A 200ns 150mW 64K HMOS EPROM","authors":"S. Smith, J. Yeargain","doi":"10.1109/ISSCC.1980.1156042","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156042","url":null,"abstract":"An 8K × 8 ultraviolet erasable EPROM fabricated in double poly HMOS technology will be described. Programming is accomplished in a quasi-static manner requiring one TTL level pulse per word.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"4 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123635383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 10W X-band pulsed GaAs FET 一个10W x波段脉冲GaAs场效应管
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156021
P. Wade, I. Drukier
{"title":"A 10W X-band pulsed GaAs FET","authors":"P. Wade, I. Drukier","doi":"10.1109/ISSCC.1980.1156021","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156021","url":null,"abstract":"Increases in GaAS FET X-band power output, possible using pulsed operation at high voltage, will be reported, citing peak power output of more than 10W obtained at 8GHz from a device capable of 5W CW at 6GHz.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124058025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 128×1030 element CCD image sensor for a periscope camera system 用于潜望镜相机系统的128×1030元件CCD图像传感器
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156053
M. Farrier, R. Dyck
{"title":"A 128×1030 element CCD image sensor for a periscope camera system","authors":"M. Farrier, R. Dyck","doi":"10.1109/ISSCC.1980.1156053","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156053","url":null,"abstract":"An imaging development, affording up to 128 lines of integration, with six exposure control taps, will be discussed. Designed with 20μm square sense elements, the active sensor area is 20.6mm long. Device employs an optically tailored polysilicon gate structure, buried channel register and floating gate preamp.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129795825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
64K dynamic 1/N fractional device bipolar memory 64K动态1/N分数器件双极存储器
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156079
J. Selleck, R. Kenyon, D. Gaffney, F. Wiedman, A. Bhattacharyya, P. Mollier
{"title":"64K dynamic 1/N fractional device bipolar memory","authors":"J. Selleck, R. Kenyon, D. Gaffney, F. Wiedman, A. Bhattacharyya, P. Mollier","doi":"10.1109/ISSCC.1980.1156079","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156079","url":null,"abstract":"This report will cover a 1/N fractional device bipolar memory cell - the FET one-device memory cell equivalent - noting that by reversing the orientation of the transistor and capacitor, the density, thin dielectric and polysilicon techniques of FET technology can be combined with the speed of bipolar technology,","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127837875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Computer architecture using NMOS technology 采用NMOS技术的计算机体系结构
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156143
M. Druke, E. Buckley, R. Gusowski, D. Carberry, R. Feaver, R. March
{"title":"Computer architecture using NMOS technology","authors":"M. Druke, E. Buckley, R. Gusowski, D. Carberry, R. Feaver, R. March","doi":"10.1109/ISSCC.1980.1156143","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156143","url":null,"abstract":"A family of NMOS devices for a CPU chip which executes 16-bit register-to-register operations in a single 400ns microcycle, and memory-to-register moves in 2 microcycles, will be described.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126662242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A single supply DAC with calibrated voltage output 具有校准电压输出的单电源DAC
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156052
B. Amazeen, P. Holloway, D. Mercer
{"title":"A single supply DAC with calibrated voltage output","authors":"B. Amazeen, P. Holloway, D. Mercer","doi":"10.1109/ISSCC.1980.1156052","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156052","url":null,"abstract":"A DAC compatible with both microprocessor bus and +5V power supply will be described. Chip has 10mW, 25MHz output buffer affording input/output compliance to ground, a current source and switch cell for direct interface to I2L. logic, and merged bandgap reference and control amplifier.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122560382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CCD image sensor for single sensor color camera 用于单传感器彩色摄像机的CCD图像传感器
1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.1980.1156139
Y. Ishirara, E. Takeuchi, N. Teranishi, A. Kohono, T. Aizawa, K. Arai, H. Shiraki
{"title":"CCD image sensor for single sensor color camera","authors":"Y. Ishirara, E. Takeuchi, N. Teranishi, A. Kohono, T. Aizawa, K. Arai, H. Shiraki","doi":"10.1109/ISSCC.1980.1156139","DOIUrl":"https://doi.org/10.1109/ISSCC.1980.1156139","url":null,"abstract":"A 384(H) × 490(V) element interline CCD image sensor, using PN+ junction photodiodes without overlayer electrodes, a low-noise charge detector and CCD registers with large charge-handling capability, will be discussed. SNR is 71dB at device saturation light level of 1.51ux.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121643592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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