一个10W x波段脉冲GaAs场效应管

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156021

P. Wade, I. Drukier

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引用次数: 2

摘要

将报道在高压下可能使用脉冲操作的GaAS FET x波段功率输出的增加，并引用能够在6GHz下实现5W连续波的器件在8GHz下获得的超过10W的峰值功率输出。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 10W X-band pulsed GaAs FET

Increases in GaAS FET X-band power output, possible using pulsed operation at high voltage, will be reported, citing peak power output of more than 10W obtained at 8GHz from a device capable of 5W CW at 6GHz.

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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