一个200ns 150mW 64K HMOS EPROM

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156042

S. Smith, J. Yeargain

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引用次数: 1

摘要

介绍了一种采用双聚HMOS技术制备的8K × 8紫外可擦除EPROM。编程以准静态方式完成，每个字需要一个TTL电平脉冲。

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A 200ns 150mW 64K HMOS EPROM

An 8K × 8 ultraviolet erasable EPROM fabricated in double poly HMOS technology will be described. Programming is accomplished in a quasi-static manner requiring one TTL level pulse per word.

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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