64K动态1/N分数器件双极存储器

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/ISSCC.1980.1156079

J. Selleck, R. Kenyon, D. Gaffney, F. Wiedman, A. Bhattacharyya, P. Mollier

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引用次数: 5

摘要

本报告将涵盖1/N分数器件双极存储单元- FET单器件存储单元等效-注意到通过反转晶体管和电容器的方向，FET技术的密度，薄介电和多晶硅技术可以与双极技术的速度相结合。

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64K dynamic 1/N fractional device bipolar memory

This report will cover a 1/N fractional device bipolar memory cell - the FET one-device memory cell equivalent - noting that by reversing the orientation of the transistor and capacitor, the density, thin dielectric and polysilicon techniques of FET technology can be combined with the speed of bipolar technology,

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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