Y. Ishirara, E. Takeuchi, N. Teranishi, A. Kohono, T. Aizawa, K. Arai, H. Shiraki
{"title":"用于单传感器彩色摄像机的CCD图像传感器","authors":"Y. Ishirara, E. Takeuchi, N. Teranishi, A. Kohono, T. Aizawa, K. Arai, H. Shiraki","doi":"10.1109/ISSCC.1980.1156139","DOIUrl":null,"url":null,"abstract":"A 384(H) × 490(V) element interline CCD image sensor, using PN+ junction photodiodes without overlayer electrodes, a low-noise charge detector and CCD registers with large charge-handling capability, will be discussed. SNR is 71dB at device saturation light level of 1.51ux.","PeriodicalId":229101,"journal":{"name":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"CCD image sensor for single sensor color camera\",\"authors\":\"Y. Ishirara, E. Takeuchi, N. Teranishi, A. Kohono, T. Aizawa, K. Arai, H. Shiraki\",\"doi\":\"10.1109/ISSCC.1980.1156139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 384(H) × 490(V) element interline CCD image sensor, using PN+ junction photodiodes without overlayer electrodes, a low-noise charge detector and CCD registers with large charge-handling capability, will be discussed. SNR is 71dB at device saturation light level of 1.51ux.\",\"PeriodicalId\":229101,\"journal\":{\"name\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.1980.1156139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1980.1156139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 384(H) × 490(V) element interline CCD image sensor, using PN+ junction photodiodes without overlayer electrodes, a low-noise charge detector and CCD registers with large charge-handling capability, will be discussed. SNR is 71dB at device saturation light level of 1.51ux.