一种埋入沟道mosfet的Gb MOS逻辑电路

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/isscc.1980.1156097

K. Nishiuchi, H. Shibayama, T. Nakamura, T. Hisatsugu, Y. Fukukawa

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引用次数: 0

摘要

本文报道了一种采用1μm设计和电子束掩模干法制备的埋道MOS分频器。获得了Gb分频和低于100ps的切换延迟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Gb MOS logic circuit with buried channel MOSFETs

A buried-channel MOS frequency divider using 1μm design and fabricated by dry processes with electron-beam made masks will be reported. Gb frequency division and sub 100ps switching delay have been obtained.

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来源期刊

1980 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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