Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium最新文献

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A thermoreflectance thermography system for measuring the transient surface temperature field of activated electronic devices 一种用于测量活化电子器件瞬态表面温度场的热反射热成像系统
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625228
P. Komarov, M. Burzo, P. Raad
{"title":"A thermoreflectance thermography system for measuring the transient surface temperature field of activated electronic devices","authors":"P. Komarov, M. Burzo, P. Raad","doi":"10.1109/STHERM.2006.1625228","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625228","url":null,"abstract":"This work reports on a system that can determine the thermal behavior of an activated complex microelectronic device by measuring its surface temperature field with a thermoreflectance-based system. The article describes the features of the experimental setup, provides details of the calibration process used to map the changes in the measured surface reflectivity to absolute temperature values, and explains the data acquisition procedure used to measure the transient temperature over a given active region of interest. The method is applied to determine the thermal behavior of actual MOSFET devices. First, the method is used to measure an activated MOSFET device and show that by scanning first and then switching the source and drain contacts, the two resulting steady state temperature scans are symmetrical. The method is then used to differentiate between the transient thermal behavior of identically activated devices that have been made on two different epitaxial layers, one with natural silicon and the other with isotopically-pure silicon","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133144883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Thermal management of high power memory module 高功率内存模块的热管理
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625231
Heejin Lee, Haehyung Lee, J. Baek, Tae-Gyeong Chung, Seyong Oh
{"title":"Thermal management of high power memory module","authors":"Heejin Lee, Haehyung Lee, J. Baek, Tae-Gyeong Chung, Seyong Oh","doi":"10.1109/STHERM.2006.1625231","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625231","url":null,"abstract":"In the semiconductor industry, the memory device has not been considered as a high power consuming product. However, the increase in the market requirements for high speed and high density has resulted in memory devices that consume more power. Especially, a memory module accommodated with many high speed memory devices can reach to very high levels of power consumption, which in turn, can reach to very high junction temperatures. Therefore, the devices can not be operated properly without thermal management. Hence, in this paper, we are looking for a way to manage the heat generated in a high power memory module. To achieve this goal, a plate fin type heat sink based on air cooling was adopted with consideration of constraints related to the implementation of its thermal solutions. Then, the cooling capability of the memory module was estimated by a parametric study. The parametric study shows that a 20mm module pitch is necessary to dissipate the amount of heat that is targeted in this paper, which is 30W. With the 20mm module pitch, an optimized heat sink configuration was designed by simulation and the cooling performance of the designed heat sink was validated by experiments. For the experiment, test modules were assembled and the junction temperatures of memory devices mounted on modules was measured on a test board. The results showed that simulated and measured data well correlate with each other within acceptable ranges. The maximum cooling capability of the designed heat sink is 37.1W with a 20mm module pitch","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131959268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Multi-domain simulation and measurement of power LED-s and power LED assemblies 大功率LED和大功率LED组件的多域仿真与测量
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625227
A. Poppe, G. Farkas, V. Székely, G. Horváth, M. Rencz
{"title":"Multi-domain simulation and measurement of power LED-s and power LED assemblies","authors":"A. Poppe, G. Farkas, V. Székely, G. Horváth, M. Rencz","doi":"10.1109/STHERM.2006.1625227","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625227","url":null,"abstract":"Besides their electrical properties the optical parameters of LEDs also depend on junction temperature. For this reason thermal characterization and thermal management plays important role in case of power LEDs, necessitating tools both for physical measurements and simulation. The focus of this paper is a combined electrical, thermal and optical characterization of such devices. In terms of simulation a novel approach of board-level electro-thermal simulation is presented whereas in terms of measurement, a combined thermal and radiometric characterization method is discussed","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131462489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 62
System-level thermal design and testing of a 3G wireless network gateway 一个3G无线网络网关的系统级热设计与测试
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625200
I. Obinelo
{"title":"System-level thermal design and testing of a 3G wireless network gateway","authors":"I. Obinelo","doi":"10.1109/STHERM.2006.1625200","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625200","url":null,"abstract":"A major OEM of dedicated gateways for mobile networks was faced with a show-stopping problem: their flagship product was failing during initial field tests due to overheating, so what to do to salvage their multi-million dollar investment and thousands of hours of development effort? The design of an improved thermal architecture for the product is the subject of this paper","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121561258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coupling surface temperature scanning and ultra-fast adaptive computing to thermally fully characterize complex three-dimensional electronic devices 耦合表面温度扫描和超快速自适应计算热充分表征复杂的三维电子器件
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625229
P. Raad, P. Komarov, M. Burzo
{"title":"Coupling surface temperature scanning and ultra-fast adaptive computing to thermally fully characterize complex three-dimensional electronic devices","authors":"P. Raad, P. Komarov, M. Burzo","doi":"10.1109/STHERM.2006.1625229","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625229","url":null,"abstract":"A novel analysis engine and experimental system capable of fully characterizing the thermal behavior of complex three-dimensional active submicron electronic devices is introduced in this article. First, the thermoreflectance thermography (TRTG) system is used to measure the 2D surface temperature field of a pulsed device, noninvasively and with submicron spatial resolution. Next, the thermal conductivity of each thin-film layer composing the device is measured and a numerical model is built using measured and known values. The temperature distribution map is then used as input for an ultrafast inverse computational solution to fully characterize the thermal behavior of the complex three-dimensional device under study. By bringing together measurement and computation, it becomes possible for the first time to noninvasively extract the three-dimensional thermal behavior of nanoscale embedded features that cannot otherwise be accessed. The power of the method is demonstrated by verifying that it can extract details of interest of a representative CMOS device","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115239263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Natural convection heat transfer from square pin fin heat sinks subject to the influence of orientation 受方向影响的方针翅散热器的自然对流换热
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625213
Ren-Tsung Huang, W. Sheu, H. Li, Chi-Chuan Wang, Kai-Shing Yang
{"title":"Natural convection heat transfer from square pin fin heat sinks subject to the influence of orientation","authors":"Ren-Tsung Huang, W. Sheu, H. Li, Chi-Chuan Wang, Kai-Shing Yang","doi":"10.1109/STHERM.2006.1625213","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625213","url":null,"abstract":"An experimental study is conducted on natural convection heat transfer from square pin fin heat sinks subject to the influence of orientation. A total of six pin fin heat sinks with various arrangements are tested under controlled environment. Test results show that the upward facing orientation yields the highest heat transfer coefficient, followed by the sideward facing and the downward facing ones. The heat transfer coefficients for upward facing are about 0% ~ 5% greater than those for sideward facing and are 0% ~ 20% greater than those for downward facing. Besides, the effect of orientation becomes less pronounced as the population density is gradually increased. It is also found that the heat transfer coefficient reveals a maximum at a fin height nearby 2 mm or at a fin density of 1 pin/cm2. The effect of fin height and fin density can be termed as a composite parameter, namely the finning factor which represents the ratio of total surface to the base surface. The heat transfer coefficient initially increases with the finning factor, attains a maximum around 1.6-1.7, and then decreases. Although the heat sinks may not necessarily surpass the un-finned base plate in the heat transfer coefficient, the heat sinks still yield smaller convection resistances than the un-finned base plate","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133756829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Measurements of mechanical coupling of non-curing high performance thermal interface materials 非固化高性能热界面材料的机械耦合测量
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625203
M. Stern, G. Jhoty, D. Kearns, B. Ong
{"title":"Measurements of mechanical coupling of non-curing high performance thermal interface materials","authors":"M. Stern, G. Jhoty, D. Kearns, B. Ong","doi":"10.1109/STHERM.2006.1625203","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625203","url":null,"abstract":"For high performance cooling applications, a separable thermal interface material (TIM) is inserted between the CPU lid (electrical component) and heat sink surface to reduce the thermal resistance. Non-curing TIMs, including thermal greases, phase change materials (PCMs), putty-like gap fillers, pads, and dry films are potential classes of TIMs that are used in this application. Materials that have higher effective thermal conductivity, such as filled thermal greases and PCMs tend to have lower interfacial contact resistance. The TIMs also mechanically couple the two interfaces through a weak adhesive bond. Data on the adhesive bonding properties of these materials is needed to predict how the TIM interface will behave when the system is subject to tensile forces during manual separation or dynamic loading induced by shock impulses. A series of controlled tests have been designed and implemented to measure the tensile pull strength of the adhesive bond. The suggested methodology, based on ASTM standards for adhesives, presents one approach for characterizing the adhesive TIM interface that could be readily adapted by others in the industry. These measurements complement in-house thermal testing of these thermal interface materials","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127731198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal management in color variable multi-chip led modules 彩色可变多芯片led模块的热管理
Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium Pub Date : 2006-03-14 DOI: 10.1109/STHERM.2006.1625224
T. Treurniet, V. Lammens
{"title":"Thermal management in color variable multi-chip led modules","authors":"T. Treurniet, V. Lammens","doi":"10.1109/STHERM.2006.1625224","DOIUrl":"https://doi.org/10.1109/STHERM.2006.1625224","url":null,"abstract":"One of the main advantages of LED technology is the possibility to build efficient color variable lighting systems. In order to apply these systems in illumination applications in high power, color variable LED modules are developed. These modules contain different LED colors, e.g. red, green and blue dice, which can be combined to generate colored and white light. For optimal color mixing, the dice of the different colors are mounted close to each other, resulting in an increased thermal load of the LED dice in the module. One of the key issues in color variable LED applications is to maintain a defined color point over life and over all flux levels. The relevant optical properties of LEDs, like luminous flux and wavelength, depend on the junction temperature of the LED. One of the ways to maintain a stable color point is to compensate for these temperature dependencies. In order to be able to perform this compensation, one has to know the junction temperature of the different dice under all loads and the relation between the luminous flux and the wavelength and this junction temperature. In this paper we present a thermal design method of a multi-chip LED module that is able to handle an increasing thermal load up to 20 Watt. Further, we present a compact model to estimate the junction temperature of the different dice at an arbitrary load. This model is used in the color control system to calculate the junction temperatures under load and adjust the loads of the different dice accordingly to maintain a defined color point. The model is validated with transient tester measurements. Application of this model results in a considerable improvement in color stability","PeriodicalId":222515,"journal":{"name":"Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133198202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
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