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Top-Down Formation of Biocompatible SiC Nanotubes 自上而下形成生物相容性碳化硅纳米管
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030035
A. D. Bouravleuv, A. N. Kazakin, Yu. A. Nashchekina, A. V. Nashchekin, E. V. Ubyyvovk, V. A. Astrahanceva, A. V. Osipov, G. V. Svyatec, S. A. Kukushkin
{"title":"Top-Down Formation of Biocompatible SiC Nanotubes","authors":"A. D. Bouravleuv, A. N. Kazakin, Yu. A. Nashchekina, A. V. Nashchekin, E. V. Ubyyvovk, V. A. Astrahanceva, A. V. Osipov, G. V. Svyatec, S. A. Kukushkin","doi":"10.1134/s1063782624030035","DOIUrl":"https://doi.org/10.1134/s1063782624030035","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new “top-down” mechanism for the formation of silicon carbide nanotubes.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"74 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of Channel Silicon to Create Filter Layers 形成通道硅以创建滤波器层
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030060
K. E. Ivlev, V. V. Bolotov, I. V. Ponomareva, E. V. Knyazev
{"title":"Formation of Channel Silicon to Create Filter Layers","authors":"K. E. Ivlev, V. V. Bolotov, I. V. Ponomareva, E. V. Knyazev","doi":"10.1134/s1063782624030060","DOIUrl":"https://doi.org/10.1134/s1063782624030060","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The features of the formation of porous layers on substrates of low doped silicon of и-type conductivity by anodic etching using illumination are considered. The formation of microporous silicon layer on the walls of macropores was found. It is shown that the illumination modes strongly influence the morphological parameters of the obtained layers. After exposure to alkali, macroporous layers with pore diameters up to 550 nm were obtained, which can be used to create filter layers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"32 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures 基于晶闸管 (Al)GaAs/GaAs 同质和异质结构的纳秒脉冲持续时间大电流低压开关
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s106378262403014x
S. O. Slipchenko, A. A. Podoskin, I. V. Shushkanov, V. A. Krychkov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, N. A. Pikhtin, T. A. Bagaev, V. N. Svetogorov, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
{"title":"High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures","authors":"S. O. Slipchenko, A. A. Podoskin, I. V. Shushkanov, V. A. Krychkov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, N. A. Pikhtin, T. A. Bagaev, V. N. Svetogorov, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov","doi":"10.1134/s106378262403014x","DOIUrl":"https://doi.org/10.1134/s106378262403014x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A series of low-voltage thyristor current switches based on (Al)GaAs/GaAs homo- and heterostructures with a volume charge region formed in the lightly doped <i>p</i>-GaAs base layer have been developed. The transient processes characteristics in pulse generation mode of nanosecond duration have been studied. It has been shown that the use of a wide-bandgap barrier based on AlGaAs at the <i>n</i>‑emitter/<i>p</i>-base junction allows reducing the minimum control current amplitude from 30 to 3 mA, and the turn-on delay time can be shortened to 6 ns. For the developed thyristor switches, a minimum transition time of 3.7–3.9 ns was demonstrated when operating in a circuit with a 1 nF capacitive load. In a circuit with a nominal 1 Ω resistive load, the thyristor switches provided a peak current of 17.5 A with a pulse duration of 3.7 ns.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"13 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic Minibands in Superlattices Based on the Semi-Dirac Crystals 基于半狄拉克晶体的超晶格中的磁小带
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030096
S. V. Kryuchkov, E. I. Kukhar, E. Yu. Kotelnikov
{"title":"Magnetic Minibands in Superlattices Based on the Semi-Dirac Crystals","authors":"S. V. Kryuchkov, E. I. Kukhar, E. Yu. Kotelnikov","doi":"10.1134/s1063782624030096","DOIUrl":"https://doi.org/10.1134/s1063782624030096","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Semi-Dirac crystals with a weak periodic modulation of the energy gap has been considered. The formation of minibands in such crystals has been studied when the latter are placed in a quantizing magnetic field. The width of the formed magnetic minibands has been shown to depend not only on the magnetic field intensity, but also on the band gap of the initial sample in contrast to gap graphene. The effect of this feature on the magneto conductivity of studied material has been investigated.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"18 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs 用于近红外发光二极管有源区的外延异质结构
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030138
R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy
{"title":"Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs","authors":"R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy","doi":"10.1134/s1063782624030138","DOIUrl":"https://doi.org/10.1134/s1063782624030138","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of AlGaAsP, GaAsP and AlGaAs/GaAsP compensating layers on the optical quality of the active area based on InGaAs/GaAs quantum wells for LEDs emitting at a wavelength of 940 nm has been studied. Heterostructures with multiple quantum wells have been grown by MOVPE technique using various approaches to compensating structural stresses. An increase in photoluminescence intensity by more than 32% was demonstrated when using AlGaAs/GaAsP compensating layers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions 原子和分子离子辐照 Ga2O3 过程中的单个碰撞级联参数分析
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030163
A. I. Struchkov, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov
{"title":"Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions","authors":"A. I. Struchkov, K. V. Karabeshkin, P. A. Karaseov, A. I. Titov","doi":"10.1134/s1063782624030163","DOIUrl":"https://doi.org/10.1134/s1063782624030163","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Collision cascade density is one of the most important parameters that determine radiation damage accumulation in semiconductors under ion bombardment. We perform calculation of collision cascade parameters formed in β-Ga<sub>2</sub>O<sub>3</sub> by irradiation with 1.3 keV/amu atomic F, P, and molecular PF<sub>4</sub> ions using two different methods: the method considering sub-cascade formation, and by calculation an average number of vacancies in spheres of fixed radius. The calculated results are compared with experimental data on damage accumulation in β-Ga<sub>2</sub>O<sub>3</sub> under irradiation with aforementioned ions. It is shown that both methods qualitatively predict the effect of collision cascade density on radiation damage accumulation in gallium oxide. Fractal nature of cascades formed in β-Ga<sub>2</sub>O<sub>3</sub> is established, corresponding fractal dimension is calculated.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"255 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon 硅中双电子捐赠者自旋三重态的光学激发
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030175
V. V. Tsyplenkov, R. Kh. Zhukavin, V. N. Shastin
{"title":"Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon","authors":"V. V. Tsyplenkov, R. Kh. Zhukavin, V. N. Shastin","doi":"10.1134/s1063782624030175","DOIUrl":"https://doi.org/10.1134/s1063782624030175","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper, we propose a method for resonant optical excitation of ortho states of two-electron donors in silicon, direct transitions to which from the ground state are extremely suppressed in case of a weak spin-orbit coupling. Excitation is proposed to be carried out using the points of anti-crossing of ortho and para states under conditions of uniaxial stress of the crystal. In these points the states cannot be unambiguously assigned to any group of states with a certain spin, as a result of which the optical transition becomes allowed. The structure of the energy levels of two-electron impurities is such that the excitation of such state almost unambiguously leads to the population of the underlying ortho-type state, which is expected to be very long-lived in the case of weak spin-orbit coupling. In the present work, theoretical estimates of the cross sections for optical transitions in the vicinity of the level anticrossing point as a function of strain for strong and weak spin-orbit coupling are made.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"50 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release 阳极氢释放机制下的 MOS 结构分解模型
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030011
O. V. Aleksandrov
{"title":"Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release","authors":"O. V. Aleksandrov","doi":"10.1134/s1063782624030011","DOIUrl":"https://doi.org/10.1134/s1063782624030011","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A quantitative model of the breakdown of MOS-structures with relatively thick (10–100 nm) gate dielectric by the mechanism of anode hydrogen release from interphase boundary Si-SiO<sub>2</sub> is proposed. The breakdown delay time is determined by dispersion transport and accumulation of hydrogen ions in the gate dielectric. It is shown that at a high concentration of hydrogen in MOS structures and electric field strength of less than ~10 MV/cm, the model satisfactorily describes breakdown delay times significantly shorter than those expected from the 1/<i>E</i> model. At higher field strengths, the breakdown is described by the anode hole injection model.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"203 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors 用于场效应晶体管的 n+/n GaAs 结构的电化学剖面分析
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030126
D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev
{"title":"The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors","authors":"D. Yu. Protasov, P. P. Kamesh, K. A. Svit, D. V. Dmitriev, A. A. Makeeva, E. M. Rzaev, K. S. Zhuravlev","doi":"10.1134/s1063782624030126","DOIUrl":"https://doi.org/10.1134/s1063782624030126","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>It is shown that when using a standard electrochemical profiling recipe that applies intensive illumination by halogen lamp with power up to 250 W of <i>n</i><sup>+</sup>/<i>n</i> GaAs structure to generate the holes necessary for etching, the resulting electron distribution profile differs from that set during growth for an electron concentration in the <i>n</i><sup>+</sup>-layer &gt; 4 × 10<sup>18</sup> cm<sup>–3</sup> when using EDTA electrolyte. This difference is due to the appearance and development of etching pits caused by the increase in the degree of defectivity of GaAs layers with increasing concentration of the donor impurity—silicon. To obtain adequate electron distribution profiles in <i>n</i><sup>+</sup>/<i>n</i> GaAs structures it is necessary to limit the illumination up to 25 W.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"58 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping 超晶格掺杂砷化镓单量子阱中的双子带磁电传输
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030047
A. A. Bykov, D. V. Nomokonov, I. S. Strygin, I. V. Marchishin, A. K. Bakarov
{"title":"Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping","authors":"A. A. Bykov, D. V. Nomokonov, I. S. Strygin, I. V. Marchishin, A. K. Bakarov","doi":"10.1134/s1063782624030047","DOIUrl":"https://doi.org/10.1134/s1063782624030047","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Two-subband magnetotransport of quasi-2D electron gas in GaAs single quantum well with AlAs/GaAs superlattice doping has been studied at <i>T</i> = 4.2 K in magnetic fields <i>B</i> &lt; 2<i>T</i>. It was demonstrated that application of negative gate voltage leads to transformation of studied two-subband electron system into the one-subband system. This transformation is accompanied by appearance of positive magnetoresistance. This behavior has been described by conventional model of classical positive magnetoresistance that takes into account elastic intersubband scattering of electrons. Combined analysis of classical positive magnetoresistance and quantum magneto-intersubband oscillations makes it possible to define the values of transport rates of intrasubband scattering and quantum rate of intersubband scattering.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"29 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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