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Formation of Single and Heterostructured Nanowires Based on InAs1 – xPx Solid Solutions on Si(111) 基于 InAs1 - xPx 固溶体在 Si(111) 上形成单层和异质结构纳米线
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040080
A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin
{"title":"Formation of Single and Heterostructured Nanowires Based on InAs1 – xPx Solid Solutions on Si(111)","authors":"A. K. Kaveev, V. V. Fedorov, L. N. Dvoretckaya, S. V. Fedina, I. S. Mukhin","doi":"10.1134/s1063782624040080","DOIUrl":"https://doi.org/10.1134/s1063782624040080","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We study the growth of nanowire arrays based on InAsP on silicon substrates. It was found that during the growth process two structural phases are formed: a cubic structure of the sphalerite type and a hexagonal structure of the wurtzite type. The epitaxial relations between InAsP and Si were determined: [0001]<sub>NWs</sub> || [111]<sub>Si</sub>, [<span>(11bar {2}0)</span>]<sub>NWs</sub> || [<span>(1bar {1}0)</span>]<sub>Si</sub>. A decrease of the radial growth rate and the formation of an axial heterojunction were revealed with the formation of thin (&lt;100 nm) segments of the InAs<sub>1 –</sub> <sub><i>x</i></sub>P<sub><i>x</i></sub> solid solution and maintaining a sufficiently high partial pressure of the As flow (at least 50%).</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"46 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te 掺砷的 Cd0.3Hg0.7Te 外延薄膜的光致发光特性
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040122
M. S. Ruzhevich, D. D. Firsov, O. S. Komkov, K. D. Mynbaev, V. S. Varavin, M. V. Yakushev
{"title":"Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te","authors":"M. S. Ruzhevich, D. D. Firsov, O. S. Komkov, K. D. Mynbaev, V. S. Varavin, M. V. Yakushev","doi":"10.1134/s1063782624040122","DOIUrl":"https://doi.org/10.1134/s1063782624040122","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of photoluminescence (PL) study of As-doped Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te solid solutions layers grown by molecular beam epitaxy on a Si substrate are presented. Analysis of the PL spectra obtained at different temperatures and excitation laser powers allows one to judge the nature of the observed peaks. The activation of arsenic in annealed samples was established, as a result of which small acceptor levels are formed. The effectiveness of arsenic as an acceptor impurity for cadmium-mercury tellurides has been confirmed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"31 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defects in GaInAsBi Epitaxial Films on Si(001) Substrates 硅（001）基底上 GaInAsBi 外延薄膜中的缺陷
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040110
A. S. Pashchenko, O. V. Devitsky, M. L. Lunina
{"title":"Defects in GaInAsBi Epitaxial Films on Si(001) Substrates","authors":"A. S. Pashchenko, O. V. Devitsky, M. L. Lunina","doi":"10.1134/s1063782624040110","DOIUrl":"https://doi.org/10.1134/s1063782624040110","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Å. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs 高压渐变 pi-n 异质结 AlGaAsSb/GaAs 中的深层缺陷
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040146
M. M. Sobolev, F. Yu. Soldatenkov
{"title":"Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs","authors":"M. M. Sobolev, F. Yu. Soldatenkov","doi":"10.1134/s1063782624040146","DOIUrl":"https://doi.org/10.1134/s1063782624040146","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>High-voltage gradual <i>p</i><sup>0</sup>–<i>i</i>–<i>n</i><sup>0</sup> junctions of Al<sub><i>x</i></sub>Ga<sub>1 –</sub> <sub><i>x</i></sub>As<sub>1 –</sub> <sub><i>y</i></sub>Sb<sub><i>y</i></sub> with <i>x</i> ~ 0.24 and <i>y</i> ~ 0.05 in the <i>i</i>‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the <i>DX</i>-center of the Si donor impurity, with a thermal activation energy <i>E</i><sub><i>t</i></sub> = 414 meV, a capture cross section σ<sub><i>n</i></sub> = 1.04 × 10<sup>–14</sup> cm<sup>2</sup>, and a concentration <i>N</i><sub><i>d</i></sub> = 2.4 × 10<sup>15</sup> cm<sup>–3</sup>. In the heterostructures studied, there were no deep levels associated with dislocations.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"97 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of InP on Si Nanowire Growth 硅基 InP 纳米线生长的特点
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030084
L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov
{"title":"Features of InP on Si Nanowire Growth","authors":"L. B. Karlina, A. S. Vlasov, I. V. Ilkiv, A. V. Vershinin, I. P. Soshnikov","doi":"10.1134/s1063782624030084","DOIUrl":"https://doi.org/10.1134/s1063782624030084","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"30 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures 基于 HfO2/HfOXNY 的结构在耐久性测量过程中的低电阻状态退化
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030114
O. O. Permyakova, A. E. Rogozhin, A. V. Myagonkikh, K. V. Rudenko
{"title":"Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures","authors":"O. O. Permyakova, A. E. Rogozhin, A. V. Myagonkikh, K. V. Rudenko","doi":"10.1134/s1063782624030114","DOIUrl":"https://doi.org/10.1134/s1063782624030114","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The mechanism of resistive switching in Pt/HfO<sub>2</sub>(8 nm)/HfO<sub><i>X</i></sub>N<sub><i>Y</i></sub>(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"6 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon 硅中的中性镁捐献者的 1s(T2)三重子的多丰弛豫
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030023
N. A. Bekin, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin
{"title":"Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon","authors":"N. A. Bekin, R. Kh. Zhukavin, V. V. Tsyplenkov, V. N. Shastin","doi":"10.1134/s1063782624030023","DOIUrl":"https://doi.org/10.1134/s1063782624030023","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using adiabatic and one-electron approximations, the rate of multiphonon relaxation of the 1<i>s</i>(<i>T</i><sub>2</sub>) triplet of neutral magnesium donors in silicon is estimated. The dominant scattering processes associated with interaction with LO and LA phonons are taken into account. According to calculations, the rate of multiphonon relaxation at zero temperature is of the order of 10<sup>11</sup> s<sup>–1</sup>.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"23 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs 中间低温加热对非化学计量砷化镓沉淀的影响
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030151
L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev
{"title":"Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs","authors":"L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev","doi":"10.1134/s1063782624030151","DOIUrl":"https://doi.org/10.1134/s1063782624030151","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs<sub>0.97</sub>Sb<sub>0.03</sub> grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs<sub>0.97</sub>Sb<sub>0.03</sub> grown at 150<b>°</b>C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"70 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of Formation of InxGa1 – xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation 等离子氮活化分子束外延法在固溶体（x ~ 0.6）不溶间隙中形成 InxGa1 - xN 块状层的特征
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030072
M. A. Kalinnikov, D. N. Lobanov, K. E. Kudryavtsev, B. A. Andreev, P. A. Yunin, L. V. Krasilnikova, A. V. Novikov, E. V. Skorokhodov, Z. F. Skorokhodov
{"title":"Features of Formation of InxGa1 – xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation","authors":"M. A. Kalinnikov, D. N. Lobanov, K. E. Kudryavtsev, B. A. Andreev, P. A. Yunin, L. V. Krasilnikova, A. V. Novikov, E. V. Skorokhodov, Z. F. Skorokhodov","doi":"10.1134/s1063782624030072","DOIUrl":"https://doi.org/10.1134/s1063782624030072","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper, the features of the formation of bulk InGaN layers with an indium content of ~ 60% in the immiscibility gap of InGaN ternary solid solutions by the method of molecular-beam epitaxy with plasma nitrogen activation are studied. The structures under study were grown on sapphire substrates, while the epitaxy temperature and the ratio of metal (In + Ga) and activated (atomic) nitrogen fluxes were varied. It has been demonstrated that the rates of thermal decomposition and phase separation for In<sub>0.6</sub>Ga<sub>0.4</sub>N ternary solutions depend nonmonotonically on the growth temperature in the range <i>T</i><sub>gr</sub> = 430–470°C. It is shown that InGaN thermal decomposition processes occur on the growth surface and lead to the appearance of surface phases of metallic In and binary InN, while phase separation leads to the appearance of InGaN phases of various compositions throughout the volume of the deposited InGaN layer. It is shown that, in the temperature range under study, phase separation is determined by surface diffusion, which can be suppressed by growth under highly nitrogen-enriched conditions, which made it possible to obtain homogeneous InGaN layers with an In content of In ~ 60% during high-temperature (<i>T</i><sub>gr</sub> = 470°C) growth. It is shown that the suppression of InGaN thermal decomposition processes is decisive in achieving effective interband luminescence of the obtained structures, while the presence of phase separation affects the radiative properties of InGaN layers to a lesser extent, at least in the region of low (<i>T</i> = 77 K) temperatures.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"21 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them 在硅表面形成 InAs 纳米岛及其异质结构
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030059
I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin
{"title":"Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them","authors":"I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin","doi":"10.1134/s1063782624030059","DOIUrl":"https://doi.org/10.1134/s1063782624030059","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"45 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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