Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030059

I. V. Ilkiv, V. V. Lendyashova, B. B. Borodin, V. G. Talalaev, T. Shugabaev, R. R. Reznik, G. E. Cirlin

引用次数: 0

Abstract

Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.

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在硅表面形成 InAs 纳米岛及其异质结构

摘要介绍了分子束外延法研究硅表面 InAs 岛形成的实验结果。研究发现，根据硅表面的凹凸和纳米坑的存在，可以形成具有双峰和均匀尺寸分布的 InAs 岛。研究还显示了制造具有 InAs 量子点的异质结构的可能性，这些量子点可在 1.65 μm 区域发光。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.