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Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation 附加光激发下电场对量子阱中激子的影响
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050038
M. A. Chukeev, E. S. Khramtsov, Shiming Zheng, I. V. Ignatiev, S. A. Eliseev, Yu. P. Efimov
{"title":"Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation","authors":"M. A. Chukeev, E. S. Khramtsov, Shiming Zheng, I. V. Ignatiev, S. A. Eliseev, Yu. P. Efimov","doi":"10.1134/s1063782624050038","DOIUrl":"https://doi.org/10.1134/s1063782624050038","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Reflection spectra of a heterostructure with a GaAs/AlGaAs quantum well (QW) of 30 nm wide have been studied under additional optical excitation in an external electric field. The influence of the electric field on all parameters of light-hole and heavy-hole exciton resonances, was studied upon selective excitation of various optical transitions. The effect of compensating for the Stark shift upon excitation to the ground exciton state of the QW is found. A sharp increase in the Stark shift of excitons in QW was found upon optical creation of charge carriers in the GaAs buffer layer. A microscopic calculation of exciton states in various electric fields has been performed. A comparison of the calculated and measured Stark shift of the heavy-hole exciton is used to obtain the dependence of the electric field strength in the QW on the applied voltage.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142257972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures 碲镉汞梯度带隙异质结构的光调节光学光谱学
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050087
O. S. Komkov, M. V. Yakushev
{"title":"Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures","authors":"O. S. Komkov, M. V. Yakushev","doi":"10.1134/s1063782624050087","DOIUrl":"https://doi.org/10.1134/s1063782624050087","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>Multilayer mercury–cadmium–telluride photodetecting heterostructures grown by molecular beam epitaxy on Si and GaAs substrates were studied using the infrared photoreflectance method. Based on the period of Franz–Keldysh oscillations observed in the photoreflectance spectra, the strength of the built-in electric field near the “working layer—graded band gap near-surface layer” heterointerface was determined in a contactless way. An analytical calculation of distribution of such field over the structure depth has specified the region in which the photomodulation signal is formed. The experimentally obtained field values turned out to be higher than the calculated ones, which is explained by the influence of the photovoltaic effect.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model 吸附大分子对单层石墨烯中载流子迁移率的影响：悬挂键模型
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s106378262405004x
S. Yu. Davydov, A. A. Lebedev
{"title":"Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model","authors":"S. Yu. Davydov, A. A. Lebedev","doi":"10.1134/s106378262405004x","DOIUrl":"https://doi.org/10.1134/s106378262405004x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Within the framework of the previously proposed model (S.Yu. Davydov. Phys. Solid State 64, 2018 (2022)), in which the interaction of a macromolecule (MM) with single-layer graphene (SLG) is carried out by stitching of dangling MM bonds with carbon atoms, the effect of these stitching on the mobility of carriers in graphene was studied. It is shown that short-range scattering of MM-SLG stitching prevails over Coulomb scattering. It has also been found that the effect of induced by stitching graphene deformation on mobility can be neglected compared to short-range scattering. The cases of free and epitaxial graphene are considered. The use of the MM-SLG-substrate structure as the basis of a biosensor is discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes 质子和电子辐照对氮化镓肖特基二极管参数的影响
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050105
A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein
{"title":"Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes","authors":"A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein","doi":"10.1134/s1063782624050105","DOIUrl":"https://doi.org/10.1134/s1063782624050105","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The carrier removal rates during proton and electron irradiations of <i>n</i>-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф<sub><i>р</i></sub> ≤ 5 × 10<sup>14</sup> cm<sup>–2</sup>; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф<sub><i>n</i></sub> ≤ 5 × 10<sup>16</sup> cm<sup>–2</sup>. The value of the removal rate during proton irradiation, η<sub><i>p</i></sub> ≈ 140 cm<sup>–1</sup>, is close to the lower limit of currently known values of η<sub><i>p</i></sub> and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η<sub><i>e</i></sub> is ≈0.47 cm<sup>–1</sup> and corresponds to the typical values of η<sub><i>e</i></sub> for type gallium nitride obtained by various methods.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1) 重掺杂 AlxGa1 - xN:Si 结构（x = 0.56-1 ）中的光增益机制
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050026
P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, N. V. Fateev
{"title":"Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1)","authors":"P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, N. V. Fateev","doi":"10.1134/s1063782624050026","DOIUrl":"https://doi.org/10.1134/s1063782624050026","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The optical gain parameters in the six heavily doped Al<sub><i>x</i></sub>Ga<sub>1 – <i>x</i></sub>N:Si structures with <i>x</i> = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (&gt;10<sup>3</sup> cm<sup>–1</sup>) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10<sup>–15</sup> cm<sup>2</sup>) and the high density (up to 10<sup>20</sup> cm<sup>–3</sup>) of radiative recombination centers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142257877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity 非对称法布里-珀罗腔中超辐射态的结构和自调制特征
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050075
E. R. Kocharovskaya, Vl. V. Kocharovsky
{"title":"Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity","authors":"E. R. Kocharovskaya, Vl. V. Kocharovsky","doi":"10.1134/s1063782624050075","DOIUrl":"https://doi.org/10.1134/s1063782624050075","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The dependence of the structure and stability of strongly asymmetric stationary states of a superradiant laser with a slightly asymmetric low-Q Fabry–Perot cavity on its length, reflection factors of mirrors, and pumping level is studied. The states are related to a self-consistent inhomogeneous half-wavelength population inversion grating. The possibility of the existence of two dynamic phase transitions from a stationary (monochromatic) state of this type to a nonstationary one is established: (1) a dissipative superradiant transition to a regime with a quasi-continuous lasing spectrum (in a weakly asymmetric cavity) and (2) a self-modulation transition to a regime with a discrete lasing spectrum. It is shown that the latter can be caused by excitation of both polariton and electromagnetic laser modes due to resonant Rabi oscillations of active centers with a sufficiently long phase relaxation time.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142257875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor AgI 超离子半导体薄膜的相变特征
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050099
A. A. Kononov, A. V. Ilinskiy, R. A. Castro, V. A. Klimov, M. E. Pashkevich, I. O. Popova, E. B. Shadrin
{"title":"Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor","authors":"A. A. Kononov, A. V. Ilinskiy, R. A. Castro, V. A. Klimov, M. E. Pashkevich, I. O. Popova, E. B. Shadrin","doi":"10.1134/s1063782624050099","DOIUrl":"https://doi.org/10.1134/s1063782624050099","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper considers the features of relaxation processes that characterize the phase transition in the superionic semiconductor AgI. Two maxima correspond to the relaxation of arrays of free electrons and positively charged silver ions were found on the spectra of the dielectric loss tangent and on the Cole–Cole diagrams. It is shown that the material under study is characterized by a temperature hysteresis, which is expressed in the lag in temperature of the reverse phase transition from the superionic phase to the semiconductor one.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polar Optical Phonons in Superlattices Si/SiO2 超晶格 Si/SiO2 中的极性光学声子
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050142
M. B. Smirnov, N. R. Grigorieva, D. V. Pankin, E. M. Roginskii, A. V. Savin
{"title":"Polar Optical Phonons in Superlattices Si/SiO2","authors":"M. B. Smirnov, N. R. Grigorieva, D. V. Pankin, E. M. Roginskii, A. V. Savin","doi":"10.1134/s1063782624050142","DOIUrl":"https://doi.org/10.1134/s1063782624050142","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A study was carried out of the dielectric properties of planar Si/SiO<sub>2</sub> heterostructures, which play an important role in modern electronics. Using the model of dielectric continuum, the spectra of polar phonons in Si/SiO<sub>2</sub> binary superlattices have been studied. Quartz and cristobalite lattices are considered as a structural model of the oxide layer. The dependences of polar optical phonons frequencies and the high-frequency dielectric constant tensor elements on the ratio of layer thicknesses were obtained. The results obtained open up the possibility of using spectroscopic data to characterize the structure of superlattices.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate 基于硅衬底氮化镓/氮化铝/氮化镓异质结构的场 p 沟道晶体管
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050178
M. N. Zhuravlev, V. I. Egorkin
{"title":"Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate","authors":"M. N. Zhuravlev, V. I. Egorkin","doi":"10.1134/s1063782624050178","DOIUrl":"https://doi.org/10.1134/s1063782624050178","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Various types of <i>p</i>-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Stability of Generation in Quantum Well Lasers 量子阱激光器发电稳定性分析
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050154
Z. N. Sokolova, L. V. Asryan
{"title":"Analysis of Stability of Generation in Quantum Well Lasers","authors":"Z. N. Sokolova, L. V. Asryan","doi":"10.1134/s1063782624050154","DOIUrl":"https://doi.org/10.1134/s1063782624050154","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A stability analysis of two modes of generation in semiconductor quantum well lasers is performed. These modes correspond to two solutions of the rate equations obtained by taking into account the internal optical loss that depends on the density of charge carriers injected into the laser waveguide region and, hence, on the injection current. It is shown that, in contrast to the first (“conventional”) mode of generation, which is always stable and hence observable, the second (“additional”) mode, which is entirely due to the internal loss that depends on the carrier density, is unstable and hence cannot be observed under the steady-state conditions in the laser structure considered in this work.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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