A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein
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引用次数: 0
Abstract
The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Фр ≤ 5 × 1014 cm–2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Фn ≤ 5 × 1016 cm–2. The value of the removal rate during proton irradiation, ηp ≈ 140 cm–1, is close to the lower limit of currently known values of ηp and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, ηe is ≈0.47 cm–1 and corresponds to the typical values of ηe for type gallium nitride obtained by various methods.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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