基于硅衬底氮化镓/氮化铝/氮化镓异质结构的场 p 沟道晶体管

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050178

M. N. Zhuravlev, V. I. Egorkin

引用次数: 0

摘要

摘要研究了基于氮化镓/氮化铝/氮化镓异质结构的各种类型的 p 沟道场效应晶体管。沟道由极化诱导的二维空穴气体形成。研究表明，在栅极由来自衬底一侧的二维电子气体形成的晶体管中，可以观察到最高的饱和电流和跨导值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate

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Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate

Abstract

Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.