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Luminescence in p–i–n Structures with Compensated Quantum Wells 带有补偿量子阱的 pi-n 结构中的发光现象
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050014
R. B. Adamov, G. A. Melentev, A. A. Podoskin, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko, I. V. Sedova, S. V. Sorokin, G. V. Klimko, I. S. Makhov, D. A. Firsov, V. A. Shalygin
{"title":"Luminescence in p–i–n Structures with Compensated Quantum Wells","authors":"R. B. Adamov, G. A. Melentev, A. A. Podoskin, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko, I. V. Sedova, S. V. Sorokin, G. V. Klimko, I. S. Makhov, D. A. Firsov, V. A. Shalygin","doi":"10.1134/s1063782624050014","DOIUrl":"https://doi.org/10.1134/s1063782624050014","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Photo- and electroluminescence in <i>p</i>–<i>i</i>–<i>n</i> structures with compensated GaAs/AlGaAs quantum wells have been studied. Two structures with different doping profiles were studied: with spatial separation of donors and acceptors (donors are localized in quantum wells, while acceptors are localized in barriers) and without it (both donors and acceptors are localized in quantum wells). The studies were carried out in the near-IR range at helium temperatures. Luminescence lines due to electron transitions from donor states to the first heavy-hole subband (<i>D</i>–<i>hh</i>1) and from the first electron subband to acceptor states (<i>e</i>1–<i>A</i>) have been identified. At large electric currents, the near-IR lasing due to these transitions was observed in the electroluminescence spectra. It has been found that the integrated lasing intensity related to the <i>D</i>–<i>hh</i>1 transitions in the structure without a spatial separation of donors and acceptors was three times higher than in the structure with the spatial separation. It is these transitions that ensure effective depletion of donor levels, which is important for the donor-assisted terahertz emission at <i>e</i>1–<i>D</i> electron transitions. The results of the work can be used in the development of electrically pumped terahertz emitters.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"18 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142257874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate 铬酸铁修饰的硫化镉的光电特性和表面形态
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050063
P. G. Kharitonova, E. G. Glukhovskoy, A. V. Kozlowski, S. V. Stetsyura
{"title":"Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate","authors":"P. G. Kharitonova, E. G. Glukhovskoy, A. V. Kozlowski, S. V. Stetsyura","doi":"10.1134/s1063782624050063","DOIUrl":"https://doi.org/10.1134/s1063782624050063","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of the nanoscale coating of iron arachinate (ArchFe) on the properties of CdS has been studied. We obtained changes in the morphology and potential of the surface, as well as in the photosensitivity of the CdS/ArchFe hybrid structure compared to unmodified CdS. We have shown the possibility of creating a heterophase structure with photosensitivity and properties of a semimagnetic semiconductor after annealing, which leads to sublimation of the organic component of the coating and diffusion of Fe deep into CdS, accompanied by the formation of nanosized FeS inclusions.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"152 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures 开发一种蚀刻 InAs/InAsSbP 光电二极管异质结构的方法
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050129
A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev
{"title":"Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures","authors":"A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev","doi":"10.1134/s1063782624050129","DOIUrl":"https://doi.org/10.1134/s1063782624050129","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO<sub>4</sub> with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density <i>j =</i> 5.7 × 10<sup>–2</sup> A/cm<sup>2</sup> and the typical current density <i>j =</i> 15.5 × 10<sup>–2</sup> A/cm<sup>2</sup>. The maximum value of <i>R</i><sub>0</sub> at room temperature is 1654 Ohm, while the <i>R</i><sub>0</sub><i>A</i> product reaches 1.17 Ohm cm<sup>2</sup>.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe 窄隙碲化镉汞中双库仑受体共振态的计算
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050166
M. S. Zholudev, D. V. Kozlov, S. V. Morozov
{"title":"Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe","authors":"M. S. Zholudev, D. V. Kozlov, S. V. Morozov","doi":"10.1134/s1063782624050166","DOIUrl":"https://doi.org/10.1134/s1063782624050166","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Localized and resonant state energies of double Coulomb acceptor in narrow-gap HgCdTe alloys are calculated. The simulation is made with scattering matrix technique within spherically symmetric three-band Kane model taking into account conduction band and two top valence bands. It is shown that appearance one-particle state is highly unlikely when the two-particle state is resonant.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"105 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142269435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current MOCVD 生长用于低暗电流光电二极管的 InGaAs 非晶异质结构
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050130
I. V. Samartsev, B. N. Zvonkov, N. V. Baidus, A. B. Chigineva, K. S. Zhidyaev, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Rykov, S. M. Plankina, A. V. Nezhdanov, A. V. Ershov
{"title":"MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current","authors":"I. V. Samartsev, B. N. Zvonkov, N. V. Baidus, A. B. Chigineva, K. S. Zhidyaev, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Rykov, S. M. Plankina, A. V. Nezhdanov, A. V. Ershov","doi":"10.1134/s1063782624050130","DOIUrl":"https://doi.org/10.1134/s1063782624050130","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.24 μm wavelength. The photosensitivity range at 10% of peak is 1.17–1.29 μm at room temperature. The current-voltage characteristics in the temperature range 9–300 K were investigated. It is shown that the dark current consists of generation-recombination and tunneling components. The dark current density at room temperature was 8 × 10<sup>–5</sup> A/cm<sup>2</sup> with a reverse bias of –5 V.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"54 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode 功率硅二极管冲击电离切换过程的空间不均匀性
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050117
S. K. Lyubutin, V. E. Patrakov, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov
{"title":"Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode","authors":"S. K. Lyubutin, V. E. Patrakov, S. N. Rukin, B. G. Slovikovsky, S. N. Tsyranov","doi":"10.1134/s1063782624050117","DOIUrl":"https://doi.org/10.1134/s1063782624050117","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Voltage drop process in power Si diode switched to a conducting state by an impact-ionization wave, which is excited by overvoltage pulse with a subnanosecond rise time, has been investigated. In experiments, a reverse voltage pulse was applied to a diode with a diameter of 6 mm without preliminary reverse bias, which provided the average rate of voltage rise across the diode <i>dU</i>/<i>dt</i> in the range of 1–10 kV/ns. Numerical simulations showed that calculated and experimentally observed voltage waveforms are in good quantitative agreement in the case when an active area of the structure <i>S</i><sub><i>a</i></sub>, through which a switching current flows, increases with <i>dU</i>/<i>dt</i> value increasing. It was shown that at <i>dU</i>/<i>dt &lt;</i> 2 kV/ns the active area tends to zero, and at <i>dU</i>/<i>dt &gt;</i> 10 kV/ns it approaches the total area of the structure. Comparison with the results of similar studies shows that the increase in the active area of the structure with the increase in the <i>S</i><sub><i>a</i></sub> value does not depend on the material of the structure (silicon and gallium arsenide), the number of layers in the semiconductor structure (diodes and thyristors), and also on the value of the initial bias voltage.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"2 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142257885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers 碲镉/碲镉锰和碲镉/碲镉镁异质结构的光致发光，其中量子阱被厚势垒隔开
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050051
N. G. Filosofov, G. V. Budkin, V. F. Agekyan, G. Karczewski, A. Yu. Serov, S. Yu. Verbin, I. V. Shtrom, A. N. Reznitsky
{"title":"Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers","authors":"N. G. Filosofov, G. V. Budkin, V. F. Agekyan, G. Karczewski, A. Yu. Serov, S. Yu. Verbin, I. V. Shtrom, A. N. Reznitsky","doi":"10.1134/s1063782624050051","DOIUrl":"https://doi.org/10.1134/s1063782624050051","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The low-temperature photoluminescence (PL) and PL excitation (PLE) spectra of two systems of CdTe quantum wells (QWs) separated by CdMnTe and CdMgTe barriers 20 nm thick are studied. The experimental PL spectra are compared with calculations that take into account the exciton effect and the influence of internal strains. The scatter of our data does not exceed that expected for monolayer fluctuations of the QW width. In the PLE spectra of a thick QW, bands were found that correspond to the increase of PL from a thick QW upon excitation of a neighbor narrow QW. The mechanism of energy transfer between QWs separated by thick barriers is discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"28 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Change in Stoichiometry of ZnS Nanoparticles from the Energy of Action to Nano- and Femtosecond Laser Radiation 从纳米和飞秒激光辐射的作用能量看 ZnS 纳米粒子的化学计量学变化
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040043
A. S. Chernikov, D. A. Kochuev, A. A. Voznesenskaya, D. V. Abramov, K. S. Khorkov
{"title":"Change in Stoichiometry of ZnS Nanoparticles from the Energy of Action to Nano- and Femtosecond Laser Radiation","authors":"A. S. Chernikov, D. A. Kochuev, A. A. Voznesenskaya, D. V. Abramov, K. S. Khorkov","doi":"10.1134/s1063782624040043","DOIUrl":"https://doi.org/10.1134/s1063782624040043","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper, experiments on laser ablation of ZnS in atmospheric air using laser pulses with different energies and durations have been carried out. In the process of ablation processing, zinc sulfide nanoparticles with different stoichiometric ratio of elements were obtained. By varying the parameters, it is possible to control changes in the size of nanoparticles and their composition. As a result of studies of synthesized nanoparticles, Raman scattering spectra, energy dispersion analysis results, and images of deposited nanoparticles were obtained. Conclusions are drawn about the suitability of nanopowder synthesis approaches for the subsequent production of stable colloidal solutions.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Triboelectric Generation by Friction of Heavily Doped Diamond Probes on a p-Si Surface 对硅表面摩擦重掺杂金刚石探针产生三电能
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s1063782624040018
P. A. Alekseev, D. D. Sakhno, M. S. Dunaevskiy
{"title":"Triboelectric Generation by Friction of Heavily Doped Diamond Probes on a p-Si Surface","authors":"P. A. Alekseev, D. D. Sakhno, M. S. Dunaevskiy","doi":"10.1134/s1063782624040018","DOIUrl":"https://doi.org/10.1134/s1063782624040018","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The generation of triboelectric current during friction of diamond probes on the surface of <i>p</i>-Si substrates with a native oxide layer was studied. The choice of probes with different doping, as well as substrates with different surface orientations, made it possible to establish the determining influence of the probe-surface work functions difference on the direction and value of the triboelectric current. The generation of triboelectric current occurs due to the tunneling of non-equilibrium charge carriers resulting from the chemical bonds breaking during friction. Under illumination conditions, an increase in the triboelectric current was observed, as well as the photocurrent appearance due to the charge carriers separation in the space charge region.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"30 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons 在砷化镓表面发现楔形金纳米团簇并利用质子偏振光谱学对其进行研究
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-16 DOI: 10.1134/s106378262404002x
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, A. V. Nashchekin, S. A. Khakhulin, O. S. Komkov
{"title":"Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons","authors":"V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, A. V. Nashchekin, S. A. Khakhulin, O. S. Komkov","doi":"10.1134/s106378262404002x","DOIUrl":"https://doi.org/10.1134/s106378262404002x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped <i>p</i>-GaAs crystal with an ultrathin oxide layer, the nanoclusters of gold (Au<sub>2</sub>Ga alloy) are fabricated. The gold clusters have the wedge shapes with rectangular bases elongated in [110] direction at GaAs(001) surface. This assertion is confirmed by the data of diagnostics of Au/<i>p</i>-GaAs(001) structures. Anisotropic plasmons localized on equally oriented wedge-shaped Au (Au<sub>2</sub>Ga) clusters are investigated with the optical reflectance anisotropy spectroscopy and spectroscopy of polarized light reflection. It is shown that the spectral peak at the energy about 0.9 eV in the near infrared range is associated with plasmons polarized along the longest sides of clusters in crystallographic direction [110]. Another peak—at the energy of 1.8 eV—is due to plasmons having polarization in direction <span>([1bar {1}0])</span>.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142258020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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