A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev
{"title":"开发一种蚀刻 InAs/InAsSbP 光电二极管异质结构的方法","authors":"A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev","doi":"10.1134/s1063782624050129","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO<sub>4</sub> with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density <i>j =</i> 5.7 × 10<sup>–2</sup> A/cm<sup>2</sup> and the typical current density <i>j =</i> 15.5 × 10<sup>–2</sup> A/cm<sup>2</sup>. The maximum value of <i>R</i><sub>0</sub> at room temperature is 1654 Ohm, while the <i>R</i><sub>0</sub><i>A</i> product reaches 1.17 Ohm cm<sup>2</sup>.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures\",\"authors\":\"A. A. Pivovarova, N. D. Vinskaya, E. V. Kunitsyna, Yu. P. Yakovlev\",\"doi\":\"10.1134/s1063782624050129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO<sub>4</sub> with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density <i>j =</i> 5.7 × 10<sup>–2</sup> A/cm<sup>2</sup> and the typical current density <i>j =</i> 15.5 × 10<sup>–2</sup> A/cm<sup>2</sup>. The maximum value of <i>R</i><sub>0</sub> at room temperature is 1654 Ohm, while the <i>R</i><sub>0</sub><i>A</i> product reaches 1.17 Ohm cm<sup>2</sup>.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"9 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624050129\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050129","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures
Abstract
A method for etching the InAs/InAsSbP photodiode heterostructures using a new precision etchant HBr : KMnO4 with a low constant etching rate was proposed. The change in the ratio of the etchant components makes it possible to set the etching rate in the range of 0.1–1.6 μm/min without deterioration of the quality of the side semiconductor surface. The use of the new etchant resulted in reducing the reverse dark currents of the InAs/InAsSbP photodiodes as well as the spread of dark current value from the device to the device. Samples with a sensitive area diameter of 300 μm demonstrate the minimum current density j = 5.7 × 10–2 A/cm2 and the typical current density j = 15.5 × 10–2 A/cm2. The maximum value of R0 at room temperature is 1654 Ohm, while the R0A product reaches 1.17 Ohm cm2.
期刊介绍：
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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