MOCVD 生长用于低暗电流光电二极管的 InGaAs 非晶异质结构

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050130

I. V. Samartsev, B. N. Zvonkov, N. V. Baidus, A. B. Chigineva, K. S. Zhidyaev, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Rykov, S. M. Plankina, A. V. Nezhdanov, A. V. Ershov

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引用次数: 0

摘要

摘要通过金属有机化学气相沉积，开发了基于数字 InGaAs/GaAs 变质缓冲层的 InGaAs 光电二极管结构的外延生长技术。基于所制结构的光电二极管的光电流光谱依赖性在 1.24 μm 波长处具有最大值。在室温下，峰值 10%时的光敏范围为 1.17-1.29 μm。研究了 9-300 K 温度范围内的电流-电压特性。结果表明，暗电流由生成-重合和隧道分量组成。室温下的暗电流密度为 8 × 10-5 A/cm2，反向偏压为 -5 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current

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MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current

Abstract

The epitaxial growth technique of InGaAs photodiode structures based on a digital InGaAs/GaAs metamorphic buffer layer by metalorganic chemical vapor deposition has been developed. The spectral dependence of the photocurrent of photodiodes based on the produced structures has a maximum at the 1.24 μm wavelength. The photosensitivity range at 10% of peak is 1.17–1.29 μm at room temperature. The current-voltage characteristics in the temperature range 9–300 K were investigated. It is shown that the dark current consists of generation-recombination and tunneling components. The dark current density at room temperature was 8 × 10^–5 A/cm² with a reverse bias of –5 V.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.