窄隙碲化镉汞中双库仑受体共振态的计算

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050166

M. S. Zholudev, D. V. Kozlov, S. V. Morozov

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引用次数: 0

摘要

摘要计算了窄隙碲镉汞合金中双库仑受体的局域能和共振态能。模拟是在球形对称三带 Kane 模型中利用散射矩阵技术进行的，其中考虑了导带和两个顶价带。结果表明，当双粒子态发生共振时，出现单粒子态的可能性很小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe

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Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe

Abstract

Localized and resonant state energies of double Coulomb acceptor in narrow-gap HgCdTe alloys are calculated. The simulation is made with scattering matrix technique within spherically symmetric three-band Kane model taking into account conduction band and two top valence bands. It is shown that appearance one-particle state is highly unlikely when the two-particle state is resonant.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.