在砷化镓表面发现楔形金纳米团簇并利用质子偏振光谱学对其进行研究

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, A. V. Nashchekin, S. A. Khakhulin, O. S. Komkov
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引用次数: 0

摘要

摘要 在掺杂了超薄氧化层的 p-GaAs 晶体 (001) 表面沉积薄金纳米薄膜,通过高温退火,制备出纳米金簇(Au2Ga 合金)。金簇呈楔形,其矩形基底在 GaAs(001)表面沿 [110] 方向拉长。金/p-砷化镓(001)结构的诊断数据证实了这一论断。利用光学反射各向异性光谱和偏振光反射光谱研究了定位在等方向楔形金(Au2Ga)簇上的各向异性质子。结果表明,在近红外范围内能量约为 0.9 eV 的光谱峰与沿晶簇最长边极化的等离子体有关 [110]。另一个峰--能量为 1.8 eV--是由于质子在方向上偏振([1\bar {1}0]\)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons

Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons

Abstract

Using high-temperature annealing of thin gold nanofilms deposited onto the (001) surface of doped p-GaAs crystal with an ultrathin oxide layer, the nanoclusters of gold (Au2Ga alloy) are fabricated. The gold clusters have the wedge shapes with rectangular bases elongated in [110] direction at GaAs(001) surface. This assertion is confirmed by the data of diagnostics of Au/p-GaAs(001) structures. Anisotropic plasmons localized on equally oriented wedge-shaped Au (Au2Ga) clusters are investigated with the optical reflectance anisotropy spectroscopy and spectroscopy of polarized light reflection. It is shown that the spectral peak at the energy about 0.9 eV in the near infrared range is associated with plasmons polarized along the longest sides of clusters in crystallographic direction [110]. Another peak—at the energy of 1.8 eV—is due to plasmons having polarization in direction \([1\bar {1}0]\).

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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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