重掺杂 AlxGa1 - xN:Si 结构（x = 0.56-1 ）中的光增益机制

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050026

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, N. V. Fateev

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引用次数: 0

摘要

摘要在室温下实验研究了六种重掺杂AlxGa1 - xN:Si结构（x = 0.56、0.62、0.65、0.68、0.74）的光学增益参数。在 λ = 266 nm 脉冲辐射的光激发下，研究了非平衡电荷载流子辐射重组的受激发射机制，这导致在光谱的宽范围（350-650 nm）内出现宽带辐射，并具有很高的发光量子产率。由于结构的光学质量好、供体-受体重组截面大（约 10-15 cm2）以及辐射重组中心密度高（高达 1020 cm-3），实现了高光学增益（103 cm-1）。

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Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1)

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Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1)

Abstract

The optical gain parameters in the six heavily doped Al_xGa_{1 – x}N:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>10³ cm^–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10^–15 cm²) and the high density (up to 10²⁰ cm^–3) of radiative recombination centers.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.