AgI 超离子半导体薄膜的相变特征

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050099

A. A. Kononov, A. V. Ilinskiy, R. A. Castro, V. A. Klimov, M. E. Pashkevich, I. O. Popova, E. B. Shadrin

{"title":"AgI 超离子半导体薄膜的相变特征","authors":"A. A. Kononov, A. V. Ilinskiy, R. A. Castro, V. A. Klimov, M. E. Pashkevich, I. O. Popova, E. B. Shadrin","doi":"10.1134/s1063782624050099","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper considers the features of relaxation processes that characterize the phase transition in the superionic semiconductor AgI. Two maxima correspond to the relaxation of arrays of free electrons and positively charged silver ions were found on the spectra of the dielectric loss tangent and on the Cole–Cole diagrams. It is shown that the material under study is characterized by a temperature hysteresis, which is expressed in the lag in temperature of the reverse phase transition from the superionic phase to the semiconductor one.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"37 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor\",\"authors\":\"A. A. Kononov, A. V. Ilinskiy, R. A. Castro, V. A. Klimov, M. E. Pashkevich, I. O. Popova, E. B. Shadrin\",\"doi\":\"10.1134/s1063782624050099\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The paper considers the features of relaxation processes that characterize the phase transition in the superionic semiconductor AgI. Two maxima correspond to the relaxation of arrays of free electrons and positively charged silver ions were found on the spectra of the dielectric loss tangent and on the Cole–Cole diagrams. It is shown that the material under study is characterized by a temperature hysteresis, which is expressed in the lag in temperature of the reverse phase transition from the superionic phase to the semiconductor one.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"37 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624050099\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050099","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

摘要本文研究了超离子半导体 AgI 相变过程中的弛豫特征。在介电损耗正切光谱和科尔-科尔图上发现了两个最大值，分别对应于自由电子阵列和带正电的银离子的弛豫。研究结果表明，所研究的材料具有温度滞后性，表现为从超离子相到半导体相的反向相变在温度上的滞后。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor

查看原文本刊更多论文

Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor

Abstract

The paper considers the features of relaxation processes that characterize the phase transition in the superionic semiconductor AgI. Two maxima correspond to the relaxation of arrays of free electrons and positively charged silver ions were found on the spectra of the dielectric loss tangent and on the Cole–Cole diagrams. It is shown that the material under study is characterized by a temperature hysteresis, which is expressed in the lag in temperature of the reverse phase transition from the superionic phase to the semiconductor one.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.