附加光激发下电场对量子阱中激子的影响

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050038

M. A. Chukeev, E. S. Khramtsov, Shiming Zheng, I. V. Ignatiev, S. A. Eliseev, Yu. P. Efimov

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引用次数: 0

摘要

摘要在外加电场的额外光激发下，研究了具有 30 nm 宽 GaAs/AlGaAs 量子阱 (QW) 的异质结构的反射光谱。在选择性激发各种光学跃迁时，研究了电场对光-空穴和重-空穴激子共振所有参数的影响。研究发现，在激发到 QW 的地激子态时，对斯塔克偏移进行补偿会产生影响。在 GaAs 缓冲层中光学产生电荷载流子时，发现 QW 中激子的斯塔克偏移急剧增加。我们对各种电场下的激子态进行了微观计算。通过比较重空穴激子的斯塔克偏移计算值和测量值，得出了 QW 中的电场强度与外加电压的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation

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Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation

Abstract

Reflection spectra of a heterostructure with a GaAs/AlGaAs quantum well (QW) of 30 nm wide have been studied under additional optical excitation in an external electric field. The influence of the electric field on all parameters of light-hole and heavy-hole exciton resonances, was studied upon selective excitation of various optical transitions. The effect of compensating for the Stark shift upon excitation to the ground exciton state of the QW is found. A sharp increase in the Stark shift of excitons in QW was found upon optical creation of charge carriers in the GaAs buffer layer. A microscopic calculation of exciton states in various electric fields has been performed. A comparison of the calculated and measured Stark shift of the heavy-hole exciton is used to obtain the dependence of the electric field strength in the QW on the applied voltage.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.