基于 HfO2/HfOXNY 的结构在耐久性测量过程中的低电阻状态退化

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030114

O. O. Permyakova, A. E. Rogozhin, A. V. Myagonkikh, K. V. Rudenko

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引用次数: 0

摘要

摘要 Pt/HfO2(8 nm)/HfOXNY(4 nm)/TiN 结构中的电阻开关机理，其中存在两种电阻开关模式：双极电阻开关和互补电阻开关。我们证明，电阻开关无需外部电流顺应。实验表明，低电阻状态下的电导率与空间电荷限制电流相对应。我们提出了一个定性模型，利用金属-绝缘体界面上的肖特基势垒调制来描述从双极电阻开关到互补电阻开关的过渡。根据这一模型，我们可以解释在耐久性测量过程中低电阻状态的退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures

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Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures

Abstract

The mechanism of resistive switching in Pt/HfO₂(8 nm)/HfO_XN_Y(4 nm)/TiN structures, in which there are two resistive switching modes: bipolar resistive switching and complementary resistive switching. We demonstrate that resistive switching without external current compliance is possible. It is shown experimentally that the conductivity in the low-resistance state corresponds to the space-charge-limited current. A qualitative model is proposed that describes the transition from bipolar resistive switching to complementary resistive switching using Schottky barrier modulation at the metal-insulator interface. Based on this model, an explanation is given for the degradation of the low-resistance state during endurance measurements.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.