{"title":"Defects in GaInAsBi Epitaxial Films on Si(001) Substrates","authors":"A. S. Pashchenko, O. V. Devitsky, M. L. Lunina","doi":"10.1134/s1063782624040110","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Å. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624040110","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Growth of a thin GalnAsBi film was carried out on a Si (001) substrate by pulsed laser deposition. The growth was carried out in the Volmer–Weber. The grains are preferentially monophase, but are separated by dislocation network, and in some areas, there are antiphase boundaries. Investigation of the real structure by transmission electron microscopy and X-ray diffractometry shows that stress relaxation occurred due to plastic shears by means of a nucleation of dislocations and a slip close-packed {111} planes, as well as twinning and a change in surface roughness. Using X-ray diffractometry, it was found that the GaInAsBi film has a lattice parameter of 5.856 Å. The root-mean-square roughness of the film surface, measured by atomic force microscopy, was 0.51 nm.
期刊介绍：
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
