Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-16 DOI:10.1134/s1063782624040146

M. M. Sobolev, F. Yu. Soldatenkov

引用次数: 0

Abstract

Abstract—

High-voltage gradual p⁰–i–n⁰ junctions of Al_xGa_{1 –} _xAs_{1 –} _ySb_y with x ~ 0.24 and y ~ 0.05 in the i‑region were studied using capacitance-voltage characteristics method and transient spectroscopy of deep levels. It has been established that the effective recombination trap in them is the DX-center of the Si donor impurity, with a thermal activation energy E_t = 414 meV, a capture cross section σ_n = 1.04 × 10^–14 cm², and a concentration N_d = 2.4 × 10¹⁵ cm^–3. In the heterostructures studied, there were no deep levels associated with dislocations.

Abstract Image

查看原文本刊更多论文

高压渐变 pi-n 异质结 AlGaAsSb/GaAs 中的深层缺陷

摘要-采用电容-电压特性法和深电平瞬态光谱法研究了 i 区 x ~ 0.24 和 y ~ 0.05 的 AlxGa1 - xAs1 - ySby 的高压渐变 p0-i-n0 结。结果表明，它们中的有效重组陷阱是硅供体杂质的 DX 中心，热活化能 Et = 414 meV，俘获截面 σn = 1.04 × 10-14 cm2，浓度 Nd = 2.4 × 1015 cm-3。在所研究的异质结构中，不存在与位错相关的深层位。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.