Features of InP on Si Nanowire Growth
IF 0.6
4区 物理与天体物理
Q4 PHYSICS, CONDENSED MATTER
引用次数: 0
Abstract
The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au-In-P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.
硅基 InP 纳米线生长的特点
摘要 在具有 2-2.5 nm 天然氧化层的取向 (111) 硅衬底上，证明了在准封闭体积内从 V/III 比为 8-10 的饱和磷和铟蒸汽中生长 InP 纳米晶须的可能性。报告显示，在初始阶段形成的金-铟-磷催化液滴生长出 InP 纳米晶须。光学研究证实在硅表面形成了 InP 纳米结构。这些纳米结构显示出锡原子的高掺杂水平。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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来源期刊
Semiconductors
物理-物理：凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍：
Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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