中间低温加热对非化学计量砷化镓沉淀的影响

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030151

L. A. Snigirev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev

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引用次数: 0

摘要

摘要通过透射电子显微镜研究了在砷化镓（001）衬底上通过低温（150°C）MBE 生长的非原子序数砷化镓和砷化镓 0.97Sb0.03 的生长后退火过程中沉淀物形成的初始阶段，中间生长中断并同时加热至 250°C。结果表明，与没有经过这种加热的材料相比，在低温条件下的短期中间加热会导致在随后的生长后退火过程中析出更大的颗粒。在 150°C 生长的 LT-GaAs 和 LT-GaAs0.97Sb0.03 中过量砷的巨大浓度、非平衡镓空位的高浓度导致的扩散增强以及非阈值成核，都可以解释这种效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

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Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

Abstract

Initial stage of precipitate formation during post-growth annealing of nonstoichiometric GaAs and GaAs_0.97Sb_0.03 grown by low-temperature (150°C) MBE on GaAs (001) substrate with intermediate growth interruption and simultaneous heating up to 250°C was studied by transmission electron microscopy. Short-term intermediate heating despite the low temperature was revealed to result in the precipitation of larger particles during subsequent post-growth annealing compared to the material not subjected to such heating. This effect is explained by the huge concentration of excess arsenic in LT-GaAs and LT-GaAs_0.97Sb_0.03 grown at 150°C, enhanced diffusion due to the high concentration of nonequilibrium gallium vacancies, and non-threshold nucleation.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.