发布求助
文献互助 智能选刊 最新文献

Semiconductors最新文献

筛选
英文 中文
Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots 温度对带有砷化镓量子点的砷化镓太阳能电池中通过各种重组通道的电流的影响
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-04 DOI: 10.1134/s1063782624030102
M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, A. M. Nadtochiy, N. A. Kalyuzhnyy
{"title":"Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots","authors":"M. A. Mintairov, V. V. Evstropov, S. A. Mintairov, R. A. Salii, A. M. Nadtochiy, N. A. Kalyuzhnyy","doi":"10.1134/s1063782624030102","DOIUrl":"https://doi.org/10.1134/s1063782624030102","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The influence of reducing carrier of thermal escape rate with temperature decreasing in various channels on the dark saturation current of a GaAs <i>p–n</i> junction with Ga<sub>0.8</sub>In<sub>0.2</sub>As quantum dots has been investigated. The dark saturation current has been calculated for temperatures ranging from 20 to 325 K. The calculation was based on the previously discovered current invariant, which determines the dependence of the saturation current on temperature and bandgap energy. The rates of recombination in various channels and their bandgaps were determined by photoluminescence spectra analysis. For various channels, characteristic temperatures were determined, below which thermal escape rate of carriers is practically absent. The saturation current calculation showed that, despite the change in the rate of recombination in different channels, it is determined only by the recombination in the channel with lower bandgap energy.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms 二维碲化镉板在闪锌矿相和边界钙原原子相中的带隙变化
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020040
A. A. Gavrikov, V. G. Kuznetsov, A. V. Kolobov
{"title":"Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms","authors":"A. A. Gavrikov, V. G. Kuznetsov, A. V. Kolobov","doi":"10.1134/s1063782624020040","DOIUrl":"https://doi.org/10.1134/s1063782624020040","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Reducing the thickness of semiconductors to the limit of a few monolayers often leads to emergence of new properties. In this work, the thickness dependence of the band gap of cadmium telluride slabs in both the sphalerite phase and in the inverted phase is studied using the density functional theory method. The sphalerite phase is characterized by Cd–Te–Cd–Te alternating atomic planes, while in the inverted phase the order of planes is Te–Cd–Cd–Te. It is shown that using slabs with a thickness of one to several monolayers variable-gap structures can be fabricated.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"14 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots 嵌入 GeSi 量子点的有序硅盘状谐振器阵列的发光特性
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020155
Zh. V. Smagina, M. V. Stepikhova, V. A. Zinovyev, S. A. Dyakov, E. E. Rodyakina, D. V. Shengurov, A. V. Kacyuba, A. V. Novikov
{"title":"Luminescent Properties of Ordered Arrays of Silicon Disk-Like Resonators with Embedded GeSi Quantum Dots","authors":"Zh. V. Smagina, M. V. Stepikhova, V. A. Zinovyev, S. A. Dyakov, E. E. Rodyakina, D. V. Shengurov, A. V. Kacyuba, A. V. Novikov","doi":"10.1134/s1063782624020155","DOIUrl":"https://doi.org/10.1134/s1063782624020155","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The emission properties of ordered arrays of silicon disk-like resonators with embedded GeSi quantum dots are studied. It is shown that, depending on the distance between the resonators, the structures can exhibit the properties of isolated Mie resonators or photonic crystals characterized by the presence of a contribution from photonic crystal modes in the photoluminescence spectrum. The formation of photonic crystals based on the disk-like resonators makes it possible to significantly increase the luminescence response in the wavelength range of 1.2–1.6 μm, even at room temperature.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"316 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron-Phonon Interaction in Perovskite Nanocrystals in Fluorophosphate Glass Matrix 氟磷酸盐玻璃基质中包光体纳米晶体的电子-虹离子相互作用
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020027
M. N. Bataev, M. S. Kuznetsova, D. V. Pankin, M. B. Smirnov, S. Yu. Verbin, I. V Ignatiev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, E. V. Kolobkova
{"title":"Electron-Phonon Interaction in Perovskite Nanocrystals in Fluorophosphate Glass Matrix","authors":"M. N. Bataev, M. S. Kuznetsova, D. V. Pankin, M. B. Smirnov, S. Yu. Verbin, I. V Ignatiev, I. A. Eliseyev, V. Yu. Davydov, A. N. Smirnov, E. V. Kolobkova","doi":"10.1134/s1063782624020027","DOIUrl":"https://doi.org/10.1134/s1063782624020027","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The photoluminescence (PL) spectra of CsPbBr<sub>3</sub> perovskite nanocrystals grown in a fluorophosphate glass matrix exhibit phonon replicas of the exciton line. The dependence of intensity of the phonon replica on its number is simulated taking into account the difference in the curvature of the excited and ground adiabatic potentials. The Raman spectra of CsPbBr<sub>3</sub> nanocrystals are measured. Calculations based on the density functional theory is performed to obtain the spectrum of phonon states of these crystals in the orthorhombic phase. The phonon frequencies observed in the PL and Raman spectra are compared with the calculation results.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"45 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Transport in Fractal Lattices with Coulomb Interaction 具有库仑相互作用的分形晶格中的量子输运
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020088
N. N. Konobeeva, R. R. Trofimov, M. B. Belonenko
{"title":"Quantum Transport in Fractal Lattices with Coulomb Interaction","authors":"N. N. Konobeeva, R. R. Trofimov, M. B. Belonenko","doi":"10.1134/s1063782624020088","DOIUrl":"https://doi.org/10.1134/s1063782624020088","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this paper, we study quantum transport, namely, the dynamics of the electron density in a fractal lattice during the propagation of electrons in it. The fractal lattice is composed of nanowires and has the form of a Sierpinski triangle in the direction perpendicular to the direction of electron propagation. The fundamental point is to take into account the Coulomb repulsion of electrons at one lattice site.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"13 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films Hg0.3Cd0.7Te 和 Hg0.7Cd0.3Te 外延薄膜的光致发光
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020143
M. S. Ruzhevich, K. D. Mynbaev, N. L. Bazhenov, V. S. Varavin, V. G. Remesnik, N. N. Mikhailov, M. V. Yakushev
{"title":"Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films","authors":"M. S. Ruzhevich, K. D. Mynbaev, N. L. Bazhenov, V. S. Varavin, V. G. Remesnik, N. N. Mikhailov, M. V. Yakushev","doi":"10.1134/s1063782624020143","DOIUrl":"https://doi.org/10.1134/s1063782624020143","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The results of a study of photoluminescence (PL) of epitaxial films of Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te and Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te solid solutions grown by molecular beam epitaxy are presented. A comparison of PL data with the results of optical transmission measurements and structural and microscopic studies showed that in terms of the degree of disorder of the solid solution, the studied Hg<sub>0.7</sub>Cd<sub>0.3</sub>Te films are not inferior in quality to the material synthesized by other methods. For Hg<sub>0.3</sub>Cd<sub>0.7</sub>Te films, PL data revealed significant composition fluctuations and the presence of acceptor states, which indicates the need to optimize the technology.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"74 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Etching Modes on the Morphology and Composition of the Surface of Multilayer Porous Silicon 蚀刻模式对多层多孔硅表面形态和成分的影响
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s106378262402009x
A. S. Lenshin, Ya. A. Peshkov, O. V. Chernousova, K. A. Barkov, S. V. Kannykin
{"title":"Influence of Etching Modes on the Morphology and Composition of the Surface of Multilayer Porous Silicon","authors":"A. S. Lenshin, Ya. A. Peshkov, O. V. Chernousova, K. A. Barkov, S. V. Kannykin","doi":"10.1134/s106378262402009x","DOIUrl":"https://doi.org/10.1134/s106378262402009x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching modes is presented. It is presented how, with an increase in the porosity index of the near-surface layer, the morphology changes and the degree of oxidation of multilayer porous silicon samples increases.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"255 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics 通过测量脉冲电流-电压特性确定半盘激光二极管的温度和热阻
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020179
F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov
{"title":"Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics","authors":"F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov","doi":"10.1134/s1063782624020179","DOIUrl":"https://doi.org/10.1134/s1063782624020179","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"33 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Weak Antilocalization in a Strongly Disordered Two-Dimensional Semimetal in an HgTe Quantum Well 碲镉汞量子阱中强无序二维半金属的弱反聚焦
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020118
E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov
{"title":"Weak Antilocalization in a Strongly Disordered Two-Dimensional Semimetal in an HgTe Quantum Well","authors":"E. B. Olshanetsky, Z. D. Kvon, N. N. Mikhailov","doi":"10.1134/s1063782624020118","DOIUrl":"https://doi.org/10.1134/s1063782624020118","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Weak localization in a highly disordered quantum well Cd<sub><i>x</i></sub>Hg<sub>1 – <i>x</i></sub>Te/HgTe/Cd<sub><i>x</i></sub>Hg<sub>1 – <i>x</i></sub>Te with a thickness of <i>d =</i> 20 nm is experimentally investigated. An analysis is made of the anomalous positive magnetoresistance (APM) caused by the suppression of the interference correction to the conductivity by a magnetic field on both sides of the charge neutrality point: for a two-dimensional semimetal and for a two-dimensional electronic metal. For the same values of resistivity, the APM peak in a 2D semimetal has a much wider width than in a 2D electron gas. A quantitative comparison of the obtained results with the theory allows, in particular, to conclude that the intensity of carrier transitions between subsystems in the 2D semimetal binary system is maximum near the charge neutrality point, where the concentrations of electrons and holes are close, and decreases as the difference in concentrations increases.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma Enhanced Atomic Layer Deposition of InP Layers and Multilayer InP/GaP Structures on Si Substrate 在硅基底上等离子体增强原子层沉积 InP 层和多层 InP/GaP 结构
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020076
A. S. Gudovskikh, A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, A. A. Maksimova, D. A. Kirilenko
{"title":"Plasma Enhanced Atomic Layer Deposition of InP Layers and Multilayer InP/GaP Structures on Si Substrate","authors":"A. S. Gudovskikh, A. V. Uvarov, A. I. Baranov, E. A. Vyacheslavova, A. A. Maksimova, D. A. Kirilenko","doi":"10.1134/s1063782624020076","DOIUrl":"https://doi.org/10.1134/s1063782624020076","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>For the first time, InP layers were grown on Si substrates at a temperature of 380°C using the plasma-enhanced atomic layer deposition. According to X-ray diffraction analysis and transmission electron microscopy, the layers are microcrystalline with a grain size of 20–30 nm and a preferred orientation (111). Raman spectra exhibit clearly distinguish the LO peak at 341.9 cm<sup>–1</sup>, which is characteristic of crystalline InP. Microcrystalline InP layers grown on fused silica substrates demonstrated a high photoconductivity of 2.3 Ω<sup>–1</sup> cm<sup>–1</sup> under solar spectrum AM1.5G (100 mW/cm<sup>2</sup>) illumination. The study of the growth of layers of binary compounds InP and GaP in one process of plasma-enhanced atomic layer deposition demonstrated the fundamental possibility of controlling the composition of InP/GaP digital alloy. The InP/GaP digital alloys are characterized by the coalescence of the LO peaks of InP (341.9 cm<sup>–1</sup>) and GaP (365 cm<sup>–1</sup>) in the Raman spectra. Increase of GaP component in the layer leads to boarding of this feature in the Raman spectra due to a shift of the edge towards the GaP peak (402 cm<sup>–1</sup>). A study of the optical properties by transmission and reflection measurements of microcrystalline InP/GaP digital alloy layers deposited on transparent substrates demonstrated the possibility of varying the optical gap in the range of 1.3–2 eV.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"6 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信