通过测量脉冲电流-电压特性确定半盘激光二极管的温度和热阻

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020179

F. I. Zubov, Yu. M. Shernyakov, A. A. Beckman, E. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, A. V. Nikolaev, E. V. Sherstnev, M. V. Maximov

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引用次数: 0

摘要

摘要通过比较激光二极管的电流-电压特性和在不同温度下测得的脉冲电流-电压特性，提出了一种确定以连续模式工作的激光二极管的温度和器件热阻的技术。该技术被应用于一个∅200 μm 半圆盘微激光器，其有源区基于 InGaAs/GaAs 量子点。研究发现，在与激光峰值功率和有源区过热导致的激光熄灭相对应的电流下，器件温度分别达到 101°C 和 149°C。激光器的热阻为 110 K/W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics

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Determination of the Temperature and Thermal Resistance of a Half-Disk Laser Diode by Measuring Pulsed Current-Voltage Characteristics

Abstract

A technique is proposed for determining the temperature of a laser diode operating in a continuous mode, as well as thermal resistance of the device by comparing its current-voltage characteristic with pulsed current-voltage characteristics measured at different temperatures. The technique was applied to a ∅200 μm half-disk microlaser with an active region based on InGaAs/GaAs quantum dots. It was found that at currents corresponding to the peak laser power and lasing quenching due to overheating of the active region, the device temperature reaches 101 and 149°C, respectively. The thermal resistance of the laser is 110 K/W.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.