二维碲化镉板在闪锌矿相和边界钙原原子相中的带隙变化

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020040

A. A. Gavrikov, V. G. Kuznetsov, A. V. Kolobov

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引用次数: 0

摘要

摘要将半导体的厚度减小到几个单层的极限往往会导致新特性的出现。本文采用密度泛函理论方法，研究了闪锌矿相和反相碲化镉板带隙的厚度依赖性。闪锌矿相的特点是 Cd-Te-Cd-Te 原子平面交替，而在倒相中，平面顺序为 Te-Cd-Cd-Te。研究表明，使用厚度为一至数个单层的板坯可以制造出可变间隙结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms

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Band Gap Variation of 2D CdTe Slabs in the Sphalerite Phase and in the Phase with Boundary Chalcogen Atoms

Abstract

Reducing the thickness of semiconductors to the limit of a few monolayers often leads to emergence of new properties. In this work, the thickness dependence of the band gap of cadmium telluride slabs in both the sphalerite phase and in the inverted phase is studied using the density functional theory method. The sphalerite phase is characterized by Cd–Te–Cd–Te alternating atomic planes, while in the inverted phase the order of planes is Te–Cd–Cd–Te. It is shown that using slabs with a thickness of one to several monolayers variable-gap structures can be fabricated.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.