Hg0.3Cd0.7Te 和 Hg0.7Cd0.3Te 外延薄膜的光致发光

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020143

M. S. Ruzhevich, K. D. Mynbaev, N. L. Bazhenov, V. S. Varavin, V. G. Remesnik, N. N. Mikhailov, M. V. Yakushev

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引用次数: 0

摘要

摘要介绍了通过分子束外延生长的 Hg0.3Cd0.7Te 和 Hg0.7Cd0.3Te 固溶体外延薄膜的光致发光（PL）研究结果。将 PL 数据与光学透射测量结果以及结构和显微镜研究结果进行比较后发现，就固溶体的无序程度而言，所研究的 Hg0.7Cd0.3Te 薄膜的质量并不比用其他方法合成的材料差。对于 Hg0.3Cd0.7Te 薄膜，PL 数据显示了显著的成分波动和受体态的存在，这表明需要优化技术。

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Abstract

The results of a study of photoluminescence (PL) of epitaxial films of Hg_0.3Cd_0.7Te and Hg_0.7Cd_0.3Te solid solutions grown by molecular beam epitaxy are presented. A comparison of PL data with the results of optical transmission measurements and structural and microscopic studies showed that in terms of the degree of disorder of the solid solution, the studied Hg_0.7Cd_0.3Te films are not inferior in quality to the material synthesized by other methods. For Hg_0.3Cd_0.7Te films, PL data revealed significant composition fluctuations and the presence of acceptor states, which indicates the need to optimize the technology.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.