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Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation 近共振激光激发下具有有效反斯托克斯光致发光的过氧化物纳米晶体光诱导加热的特殊性
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020131
N. S. Pokryshkin, I. O. Sobina, A. A. Knysh, A. S. Eremina, A. V. Syuy, V. G. Yakunin, V. Yu. Timoshenko
{"title":"Peculiarities of Photoinduced Heating of Perovskite Nanocrystals with Effective Anti-Stokes Photoluminescence under Near-Resonant Laser Excitation","authors":"N. S. Pokryshkin, I. O. Sobina, A. A. Knysh, A. S. Eremina, A. V. Syuy, V. G. Yakunin, V. Yu. Timoshenko","doi":"10.1134/s1063782624020131","DOIUrl":"https://doi.org/10.1134/s1063782624020131","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The optical properties of a photoluminescent material based on CsPbBr<sub>3</sub> perovskite nanocrystals were studied in this work. The laser heating of the obtained samples was studied under three different regimes of laser excitation: the photoluminescence band appears in the Stokes region, in the anti-Stokes region, and coincides with the excitation line. It was found that under laser excitation of a certain wavelength, this material is able to demonstrate predominantly anti-Stokes (upconversion) photoluminescence. A method is proposed for estimating the PL quantum yield from data on absorption, photoheating, and the position of the photoluminescence band of a sample at two different wavelengths. The external photoluminescence quantum yield of CsPbBr<sub>3</sub> nanocrystals was experimentally determined to be 91 ± 4%. The results of this work can be useful for the development of optical cooling technology and can be used in the development of laser devices based on perovskite materials.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"24 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stress Analysis of GaN-Based Heterostructures on Silicon Substrates 硅衬底上氮化镓基异质结构的应力分析
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020015
D. S. Arteev, A. V. Sakharov, E. E. Zavarin, A. E. Nikolaev, M. A. Yagovkina, A. F. Tsatsulnikov
{"title":"Stress Analysis of GaN-Based Heterostructures on Silicon Substrates","authors":"D. S. Arteev, A. V. Sakharov, E. E. Zavarin, A. E. Nikolaev, M. A. Yagovkina, A. F. Tsatsulnikov","doi":"10.1134/s1063782624020015","DOIUrl":"https://doi.org/10.1134/s1063782624020015","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Elastic stresses in AlN layers on silicon substrates of different thickness, as well as in multilayer (Al, Ga)N structures grown on AlN/Si templates, were investigated based on in-situ reflectometry/deflectometry data. It was found that tensile stresses arise during the growth of AlN, with their magnitude increasing with thicker the substrate. During the growth of multilayer step-graded (Al, Ga)N structures, all layers underwent compressive stress which decreased towards the surface. After cooling the structures to room temperature, some of the lower AlGaN layers remained entirely compressed, while another part experienced both compressive (in the lower part of each layer) and tensile (in the upper part of each layer) stresses.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"74 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates 纳米碳化硅/硅混合基底上氮化铝薄膜的结构和机械特性研究
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020064
A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov
{"title":"Studies of Structural and Mechanical Properties of AlGaN Thin Films on Nano-SiC/Si Hybrid Substrates","authors":"A. S. Grashchenko, S. A. Kukushkin, S. S. Sharofidinov","doi":"10.1134/s1063782624020064","DOIUrl":"https://doi.org/10.1134/s1063782624020064","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An experimental study of the structural characteristics of the surface and the parameters of hardness and elastic modulus of thin AlGaN films grown on nano-SiC/Si hybrid substrates was carried out. AlGaN layers on nano-SiC on Si with orientations (001), (011), and (111) have been investigated using atomic force microscopy and nanoindentation method. It is shown that the orientation of the Si substrate has a significant effect on the surface structure of AlGaN films and the elastic modulus parameter of AlGaN near the surface. The surface roughness and structural characteristics of AlGaN layers grown on nano-SiC on Si hybrid substrates have been determined. The elastic modulus parameters of AlGaN films near the surface and in the film volume have been measured. The hardness parameters of AlGaN thin films on nano-SiC on Si were experimentally determined.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure 无基底 InAsSbP/InAsSb 双异质结构中的空间电致发光分布和内部量子效率
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020106
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal’chenko
{"title":"Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure","authors":"B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal’chenko","doi":"10.1134/s1063782624020106","DOIUrl":"https://doi.org/10.1134/s1063782624020106","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures (λ <i>=</i> 4.2 μm). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"9 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode 单模微条纹半导体激光条（1065 nm）在增益-收缩模式下工作时的激光生成动力学特性
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s106378262402012x
A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin
{"title":"Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode","authors":"A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin","doi":"10.1134/s106378262402012x","DOIUrl":"https://doi.org/10.1134/s106378262402012x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes’ turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 μm width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"62 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds 从金属有机化合物中选择性面积外延 InP/GaInP2 量子点
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020167
A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov
{"title":"Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds","authors":"A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov","doi":"10.1134/s1063782624020167","DOIUrl":"https://doi.org/10.1134/s1063782624020167","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Experiments on the growth of self-assembled InP/GaInP<sub>2</sub> quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO<sub>2</sub> and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"16 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206671","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theoretical Estimates of the Thermoelectric Power Factor of Graphene Encapsulated between 3D and 2D Semiconductor and Metal Slabs 封装在三维和二维半导体与金属板之间的石墨烯的热电功率因数的理论估计值
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020039
S. Yu. Davydov, O. V. Posrednik
{"title":"Theoretical Estimates of the Thermoelectric Power Factor of Graphene Encapsulated between 3D and 2D Semiconductor and Metal Slabs","authors":"S. Yu. Davydov, O. V. Posrednik","doi":"10.1134/s1063782624020039","DOIUrl":"https://doi.org/10.1134/s1063782624020039","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The conditions of extremeness of the conductivity, the Seebeck coefficient and the thermoelectric power factor values of encapsulated graphene, considered as a functions of the chemical potential, are de-termined. 3D and 2D semiconductors and transition metals are considered as slabs. The use of simple models allowed us to obtain analytical results. Numerical estimates were performed for bulk Si, Ge and 16 binary III‒V and II–VI compounds, six two-dimensional semiconductor transition metal dichalcagenides and all elements of the 3<i>d-</i>, 4<i>d-</i>, and 5<i>d</i>-series. Recommendations of slab materials allowing to maximize thermoelectric characteristics are given. Encapsulated two-layer graphene is also briefly discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene in the Magnetic Field with Constant Gradient 恒定梯度磁场中的石墨烯
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-09-02 DOI: 10.1134/s1063782624020052
A. V. Germanenko, E. L. Rumyantsev
{"title":"Graphene in the Magnetic Field with Constant Gradient","authors":"A. V. Germanenko, E. L. Rumyantsev","doi":"10.1134/s1063782624020052","DOIUrl":"https://doi.org/10.1134/s1063782624020052","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The possibility of the carriers’ confinement in graphene by the magnetic field with constant gradient is considered. The obtained results are compared with the classical description of the plasma motion within magnetically neutral sheet in the earth geomagnetic tail. The consideration is carried out within the original strictly gauge invariant approach making use of the additional integral of motion, so called pseudo-momentum. The essential role of the tunneling effect distinguishing quantum case from classical behavior is revealed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"50 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a Single-Mode DFB Heterolaser with Inclined Radiation Output 开发具有倾斜辐射输出的单模 DFB 异质激光器
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010019
V. R. Baryshev, E. D. Egorova, N. S. Ginzburg, E. R. Kocharovskaya, A. M. Malkin, V. Yu. Zaslavsky, C. B. Morozov, A. S. Sergeev
{"title":"Development of a Single-Mode DFB Heterolaser with Inclined Radiation Output","authors":"V. R. Baryshev, E. D. Egorova, N. S. Ginzburg, E. R. Kocharovskaya, A. M. Malkin, V. Yu. Zaslavsky, C. B. Morozov, A. S. Sergeev","doi":"10.1134/s1063782624010019","DOIUrl":"https://doi.org/10.1134/s1063782624010019","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>We study a possibility of implementing a single-mode DFB heterolaser with inclined (with respect to the surface of the structure) output of the generated radiation. We find the periodic dielectric structure shape that makes it possible to realize the distributed feedback for wavebeams propagating along the structure and, at the same time, to ensure the output of up to 70% of the generated radiation power in the inclined direction. Within the framework of the semiclassical quasi-optical model, the possibility of stationary lasing regimes is shown for finite lateral dimensions of the Bragg structure.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Components Ratio in Heterogeneous CdS-PbS Material on Photoelectric Characteristics and Their Stability over Time 异质 CdS-PbS 材料中的成分比例对光电特性及其随时间变化稳定性的影响
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010081
A. V. Kozlowski, N. A. Chufarova, D. R. Baybikova, A. A. Serdobintsev, S. V. Stetsyura
{"title":"Influence of Components Ratio in Heterogeneous CdS-PbS Material on Photoelectric Characteristics and Their Stability over Time","authors":"A. V. Kozlowski, N. A. Chufarova, D. R. Baybikova, A. A. Serdobintsev, S. V. Stetsyura","doi":"10.1134/s1063782624010081","DOIUrl":"https://doi.org/10.1134/s1063782624010081","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The effect of the ratio of CdS and PbS components on the surface morphology, optical and photoelectric characteristics of films obtained by hydrochemical deposition has been studied. It is shown that, depending on the predominance of CdS or PbS in the film, the surface morphology changes significantly, which correlates with changes in the optical and photoelectric characteristics. An increase in the stability of photoelectric characteristics is demonstrated only by samples with a predominance of CdS. When PbS predominates, photoquenching and slow relaxation of the dark current after illumination are observed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"255 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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