Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020106

B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal’chenko

引用次数: 0

Abstract

In this work, we calculated the spatial distribution of the electroluminescence intensity taking into account the features of current spreading and taking into account the dependence of the internal quantum yield on the current density with the dominance of Auger recombination in flip-chip diodes based on InAsSbP/InAsSb double heterostructures (λ = 4.2 μm). By comparing the calculated data and the radiation distribution over the sample surface, the internal quantum efficiency of electroluminescence and its dependence on the current density at room temperature are determined.

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无基底 InAsSbP/InAsSb 双异质结构中的空间电致发光分布和内部量子效率

摘要在这项工作中，我们计算了基于 InAsSbP/InAsSb 双异质结构 (λ = 4.2 μm)的倒装芯片二极管中电致发光强度的空间分布，其中考虑到了电流扩散的特征，并考虑到了内部量子产率对电流密度的依赖性以及奥杰尔重组的主导性。通过比较计算数据和样品表面的辐射分布，确定了电致发光的内部量子效率及其与室温下电流密度的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.