开发具有倾斜辐射输出的单模 DFB 异质激光器

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s1063782624010019

V. R. Baryshev, E. D. Egorova, N. S. Ginzburg, E. R. Kocharovskaya, A. M. Malkin, V. Yu. Zaslavsky, C. B. Morozov, A. S. Sergeev

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引用次数: 0

摘要

摘要我们研究了实现单模 DFB 异质激光器的可能性，该激光器具有倾斜（相对于结构表面）的辐射输出。我们找到了周期性介质结构的形状，它可以实现波束沿结构传播的分布式反馈，同时确保在倾斜方向输出高达 70% 的辐射功率。在半经典准光学模型的框架内，展示了在布拉格结构的有限横向尺寸下产生静态激光的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Development of a Single-Mode DFB Heterolaser with Inclined Radiation Output

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Development of a Single-Mode DFB Heterolaser with Inclined Radiation Output

Abstract

We study a possibility of implementing a single-mode DFB heterolaser with inclined (with respect to the surface of the structure) output of the generated radiation. We find the periodic dielectric structure shape that makes it possible to realize the distributed feedback for wavebeams propagating along the structure and, at the same time, to ensure the output of up to 70% of the generated radiation power in the inclined direction. Within the framework of the semiclassical quasi-optical model, the possibility of stationary lasing regimes is shown for finite lateral dimensions of the Bragg structure.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.