从金属有机化合物中选择性面积外延 InP/GaInP2 量子点

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s1063782624020167

A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov

{"title":"从金属有机化合物中选择性面积外延 InP/GaInP2 量子点","authors":"A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov","doi":"10.1134/s1063782624020167","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Experiments on the growth of self-assembled InP/GaInP<sub>2</sub> quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO<sub>2</sub> and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"16 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds\",\"authors\":\"A. S. Vlasov, K. M. Afanasev, A. I. Galimov, N. A. Kalyuzhnyy, D. V. Lebedev, A. V. Malevskaya, S. A. Mintairov, M. V. Rakhlin, R. A. Salii, A. M. Mozharov, I. S. Mukhin, A. M. Mintairov\",\"doi\":\"10.1134/s1063782624020167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>Experiments on the growth of self-assembled InP/GaInP<sub>2</sub> quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO<sub>2</sub> and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"16 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-09-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624020167\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624020167","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

摘要利用 MOVPE 外延技术在介质掩膜 0.1-1 μm 孔径处生长自组装 InP/GaInP2 量子点的实验已经完成。提出并实施了实施升离光刻法的一系列操作。结果表明，可以获得直径为 100 nm 或更小的孔径。热沉积二氧化硅和湿法蚀刻相结合，可产生最小量的非辐射缺陷，并使孔径中的单个 QD 产生稳定的 PL 信号。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds

查看原文本刊更多论文

Selective Area Epitaxy of InP/GaInP2 Quantum Dots from Metal-Organic Compounds

Abstract

Experiments on the growth of self-assembled InP/GaInP₂ quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO₂ and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.