Dynamics of Laser Generation in Single-Mode Microstripe Semiconductor Laser Bar (1065 nm) Operating in Gain-Swithching Mode

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-02 DOI:10.1134/s106378262402012x

A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, V. A. Krychkov, A. E. Grishin, N. A. Pikhtin

引用次数: 0

Abstract

The study investigates microstripe bars of optically isolated single-mode lasers based on heterostructures with double asymmetry, operating under sub-nanosecond current pulse pumping conditions. For microstripe bars with different filling densities of the emitting aperture, the effect of time delay dispersion of various stripes’ turn-on is demonstrated, with a maximum difference up to 50 ps. The developed microstripe bar designs demonstrate stable zero mode lasing. The microstripe bar consisting of 10 stripes with a 6 μm width and a stripe period of 20 μm demonstrates pulses with a peak power of 3 W and a duration of 140 ps under 0.4 ns current pulses pumping.

Abstract Image

查看原文本刊更多论文

单模微条纹半导体激光条（1065 nm）在增益-收缩模式下工作时的激光生成动力学特性

摘要该研究调查了在亚纳秒电流脉冲泵浦条件下工作的基于双不对称异质结构的光隔离单模激光器的微条纹条。对于具有不同发射孔填充密度的微条纹条，各种条纹导通的时间延迟色散效应得到了证实，最大差异可达 50 ps。所开发的微带条设计显示出稳定的零模激光。由 10 条宽度为 6 μm、条纹周期为 20 μm 的条纹组成的微条纹条在 0.4 ns 电流脉冲泵浦下可产生峰值功率为 3 W、持续时间为 140 ps 的脉冲。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.