发布求助
文献互助 智能选刊 最新文献

Semiconductors最新文献

筛选
英文 中文
Singlet-Triplet Radiative Transitions in Silicon Nanocrystals with Shallow Donors 浅捐献者硅纳米晶体中的单三重辐射转变
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010044
S. A. Fomichev, V. A. Burdov
{"title":"Singlet-Triplet Radiative Transitions in Silicon Nanocrystals with Shallow Donors","authors":"S. A. Fomichev, V. A. Burdov","doi":"10.1134/s1063782624010044","DOIUrl":"https://doi.org/10.1134/s1063782624010044","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Absrtact</h3><p>—Within the framework of the envelope function approximation, the rates of intraband radiative transitions in silicon nanocrystals with donors are calculated. It is shown that for nanocrystals of sufficiently small sizes (about two nanometers in diameter), the singlet level splitting off from the rest of the spectrum in the conduction band, arising due to the short-range potential of the donor ion, can be sufficiently strong (more than eV for a bismuth atom), which makes emission in the visible range possible. The rates of radiative transitions turn out to be on the order of inverse microseconds. At the same time, in the case of intraband transitions, Auger recombination can be completely eliminated and, thereby, the quantum efficiency of the luminescence process is significantly increased.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3 质子辐照 β-Ga2O3 中 Cr3+ 杂质发光的研究
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010020
V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski
{"title":"Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3","authors":"V. Yu. Davydov, A. N. Smirnov, I. A. Eliseyev, Yu. E. Kitaev, S. S. Sharofidinov, A. A. Lebedev, D. Yu. Panov, V. A. Spiridonov, D. A. Bauman, A. E. Romanov, V. V. Kozlovski","doi":"10.1134/s1063782624010020","DOIUrl":"https://doi.org/10.1134/s1063782624010020","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Proton irradiation of β-Ga<sub>2</sub>O<sub>3</sub> crystals has been established to lead to a significant increase in the amount of Cr<sup>3+</sup> ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr<sup>3+</sup> ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr<sup>3+</sup> ions in the β-Ga<sub>2</sub>O<sub>3</sub> matrix has been found. The results obtained indicate the potential possibility of using β-Ga<sub>2</sub>O<sub>3</sub> crystals as optical dosimeters of proton irradiation.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"22 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields 低温和强磁场条件下硅中砷核的动态极化参数
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s106378262401010x
M. B. Lifshits, V. A. Grabar, N. S. Averkiev
{"title":"Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields","authors":"M. B. Lifshits, V. A. Grabar, N. S. Averkiev","doi":"10.1134/s106378262401010x","DOIUrl":"https://doi.org/10.1134/s106378262401010x","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The paper theoretically describes the solid effect in the Si:As structure in ESR conditions at low temperatures and in strong magnetic fields. A quantitative comparison of the results of calculating the dynamic polarization of As nuclei in silicon by the Overhauser mechanism and the solid effect with experimental data has been carried out. A good agreement between theory and experiment was demonstrated and the key parameter of the effects, the time of cross-relaxation transitions, was determined which turned out to be approximately 10 s for the As atom.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Conductivity in Single and Coupled Quantum-Dimensional Particles of Narrow-Gap Semiconductors 窄隙半导体单个和耦合量子维粒子的量子传导性
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010056
M. V. Gavrikov, E. G. Glukhovskoy, N. D. Zhukov
{"title":"Quantum Conductivity in Single and Coupled Quantum-Dimensional Particles of Narrow-Gap Semiconductors","authors":"M. V. Gavrikov, E. G. Glukhovskoy, N. D. Zhukov","doi":"10.1134/s1063782624010056","DOIUrl":"https://doi.org/10.1134/s1063782624010056","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantumsized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir–Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission–injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the <i>I–V</i> characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"29 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Persistent Relaxation Processes in Proton-Irradiated 4H-SiC 质子辐照 4H-SiC 中的持续弛豫过程
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010093
A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein
{"title":"Persistent Relaxation Processes in Proton-Irradiated 4H-SiC","authors":"A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein","doi":"10.1134/s1063782624010093","DOIUrl":"https://doi.org/10.1134/s1063782624010093","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The processes of long-term (persistent) conductivity relaxation in <i>n</i>-type silicon carbide irradiated with protons in a wide range irradiation temperatures <i>T</i><sub><i>i</i></sub> from 23 to 500°C are studied. It is shown for the first time that as a result of the proton irradiation with the fluence of 10<sup>14</sup> cm<sup>–2</sup>, two “competing” long-term processes of conductivity relaxation can be observed. The characteristics of both processes significantly depend on the irradiation temperature and bias, at which the dynamics of conductivity changes is studied. After applying a relatively small constant voltage to the sample, the decrease in current during persistent relaxation process is replaced by persistent increase in current and establishing of the steady state. Both processes are characterized by a very wide range of time constants. When irradiation is performed at room temperature (<i>T</i><sub><i>i</i></sub> <i>=</i> 23°C), the time constants range from milliseconds to hundreds of seconds. When the samples are irradiated at elevated temperatures, the time constants are in the range from milliseconds to hundreds of milliseconds. The higher the bias applied, the faster the decrease in current is replaced by its increase. The possible nature of the observed effects is discussed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"7 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of a Solar Cell Based on Co3O4 and (Co3O4)1 – x(ZnO)x Films 基于 Co3O4 和 (Co3O4)1 - x(ZnO)x 薄膜的太阳能电池建模
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010068
I. A. Gulyaeva, V. V. Petrov
{"title":"Modeling of a Solar Cell Based on Co3O4 and (Co3O4)1 – x(ZnO)x Films","authors":"I. A. Gulyaeva, V. V. Petrov","doi":"10.1134/s1063782624010068","DOIUrl":"https://doi.org/10.1134/s1063782624010068","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Numerical simulation of a solar cell based on the heterojunction of nanocrystalline films of zinc oxide modified with cobalt oxide (Co<sub>3</sub>O<sub>4</sub>)<sub>1 –</sub> <sub><i>x</i></sub> (ZnO)<sub><i>x</i></sub> and cobalt oxide (Co<sub>3</sub>O<sub>4</sub>) formed by solid-phase pyrolysis is carried out. The effect of the electron affinity of (Co<sub>3</sub>O<sub>4</sub>)<sub>1 –</sub> <sub><i>x</i></sub> (ZnO)<sub><i>x</i></sub> films, the thickness of the Co<sub>3</sub>O<sub>4</sub> layer and the concentration of acceptors in it on the photoelectric parameters has been studied.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"1 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Frequency Stimulated Emission in Hg(Cd)Te/CdHgTe Heterostructure 碲镉汞异质结构中的双频受激发射
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010032
M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov
{"title":"Two-Frequency Stimulated Emission in Hg(Cd)Te/CdHgTe Heterostructure","authors":"M. A. Fadeev, A. A. Yantser, A. A. Dubinov, D. V. Kozlov, V. V. Rumyantsev, N. N. Mikhailov, V. I. Gavrilenko, S. V. Morozov","doi":"10.1134/s1063782624010032","DOIUrl":"https://doi.org/10.1134/s1063782624010032","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>In this work, we studied the spectra of stimulated emission of a waveguide heterostructure with quantum wells based on HgCdTe. In the course of the studies, we used optical pumping, at wavelengths of 2 and 2.3 μm, which are mainly absorbed, in the barriers and quantum wells, respectively. It was found that in both cases optical pumping leads to stimulated emission, with a wavelength corresponding to the energy of the fundamental transition in quantum wells, it being 138 meV. With pumping absorbed in barriers, it was found that a short-wavelength emission line with an energy of 248 meV appeared on the spectra, which can be attributed to transitions involving deep donor levels. At liquid nitrogen temperature, increasing the pumping intensity leads to the appearance of a narrow peak in the short-wave line and, by selecting the pumping parameters, two-frequency generation at 5 and 7 μm wavelengths can be achieved.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"3 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Convergence of Plasmon and Electron Transition Energies in Crystal Bi0.6Sb1.4Te3 晶体 Bi0.6Sb1.4Te3 中等离子体和电子转变能的趋同
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010159
N. P. Stepanov
{"title":"Convergence of Plasmon and Electron Transition Energies in Crystal Bi0.6Sb1.4Te3","authors":"N. P. Stepanov","doi":"10.1134/s1063782624010159","DOIUrl":"https://doi.org/10.1134/s1063782624010159","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The temperature dependences of the reflection coefficient spectra in the range of effects caused by the resonant behavior of the plasma of free charge carriers of the Bi<sub>0.6</sub>Sb<sub>1.4</sub>Te<sub>3</sub> crystal, in the temperature dependences of the magnetic susceptibility of which features are observed, are investigated. A change in the shape of the plasma edge and the resulting splitting of the peak of the energy loss function were detected, which allows us to conclude that an electron-plasmon interaction affecting the state of the electronic system has been observed.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"58 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures 非均匀铁磁性 InGaAs/GaAs/δ-Mn 结构中的相干自旋动力学
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010160
S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov
{"title":"Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures","authors":"S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov","doi":"10.1134/s1063782624010160","DOIUrl":"https://doi.org/10.1134/s1063782624010160","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"45 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity 外腔中单模激光二极管微纹条（1050 nm）的横向模式选择
IF 0.7 4区 物理与天体物理
Semiconductors Pub Date : 2024-08-30 DOI: 10.1134/s1063782624010135
A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko
{"title":"Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity","authors":"A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, S. O. Slipchenko","doi":"10.1134/s1063782624010135","DOIUrl":"https://doi.org/10.1134/s1063782624010135","url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Radiative characteristics of microstripe laser diode bar in an external resonator based on an aspherical lens and a flat dielectric mirror were Investigated. The bar had total emitting aperture of 185 μm, formed by 10 stripes with a width of 6 μm separated by mesa-grooves. Operation in the external resonator of the entire emitting aperture was characterized by a multimode generation regime with a peak power of 3 W/6 A. Selection of lateral modal structures and transition to a single-mode regime is possible by limiting the number of stripes involved in optical feedback. Dependences of optical mode reconfiguration were studied by introducing limiting slits into the external cavity. It was shown that limiting the emitting aperture involved in the feedback to 65 μm allows us to demonstrate high-order single-mode operation with far-field divergence for the central lobe of 1°.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"17 1","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142226280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信