非均匀铁磁性 InGaAs/GaAs/δ-Mn 结构中的相干自旋动力学

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s1063782624010160

S. V. Zaitsev, V. V. Dremov, V. S. Stolyarov

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引用次数: 0

摘要

摘要：对InGaAs/GaAs量子阱异质结构中光激发载流子相干自旋动力学的详细研究表明，该异质结构中的InGaAs/GaAs量子阱和由δ-Mn层与量子阱隔开的3-10 nm厚的GaAs间隔层在平面上具有很强的不均匀性，载流子定位区域之间存在介观分离。在δ-锰层居里温度以下，使用磁力显微镜也能观察到介观分离，其特征尺度为 ~100-200 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures

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Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures

Abstract

A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a δ-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of ~100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the δ-Mn-layer.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.