低温和强磁场条件下硅中砷核的动态极化参数

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-08-30 DOI:10.1134/s106378262401010x

M. B. Lifshits, V. A. Grabar, N. S. Averkiev

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引用次数: 0

摘要

摘要本文从理论上描述了硅:砷结构在低温和强磁场 ESR 条件下的固态效应。通过奥弗豪斯机制和固体效应计算硅中 As 原子核的动态极化结果，并与实验数据进行了定量比较。结果表明理论与实验之间存在良好的一致性，并确定了这些效应的关键参数--交叉衰减转变的时间，对于 As 原子而言，该时间约为 10 秒。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields

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Parameters of Dynamic Polarization of As Nuclei in Silicon at Low Temperatures and Strong Magnetic Fields

Abstract

The paper theoretically describes the solid effect in the Si:As structure in ESR conditions at low temperatures and in strong magnetic fields. A quantitative comparison of the results of calculating the dynamic polarization of As nuclei in silicon by the Overhauser mechanism and the solid effect with experimental data has been carried out. A good agreement between theory and experiment was demonstrated and the key parameter of the effects, the time of cross-relaxation transitions, was determined which turned out to be approximately 10 s for the As atom.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.