Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030138

R. A. Salii, S. A. Mintairov, A. M. Nadtochiy, N. A. Kalyuzhnyy

引用次数: 0

Abstract

The influence of AlGaAsP, GaAsP and AlGaAs/GaAsP compensating layers on the optical quality of the active area based on InGaAs/GaAs quantum wells for LEDs emitting at a wavelength of 940 nm has been studied. Heterostructures with multiple quantum wells have been grown by MOVPE technique using various approaches to compensating structural stresses. An increase in photoluminescence intensity by more than 32% was demonstrated when using AlGaAs/GaAsP compensating layers.

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用于近红外发光二极管有源区的外延异质结构

摘要研究了 AlGaAsP、GaAsP 和 AlGaAs/GaAsP 补偿层对基于 InGaAs/GaAs 量子阱的有源区光学质量的影响，这些有源区用于波长为 940 nm 的发光二极管。通过 MOVPE 技术，采用各种方法补偿结构应力，生长出了具有多个量子阱的异质结构。使用 AlGaAs/GaAsP 补偿层时，光致发光强度提高了 32% 以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.