Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions

Abstract

Collision cascade density is one of the most important parameters that determine radiation damage accumulation in semiconductors under ion bombardment. We perform calculation of collision cascade parameters formed in β-Ga₂O₃ by irradiation with 1.3 keV/amu atomic F, P, and molecular PF₄ ions using two different methods: the method considering sub-cascade formation, and by calculation an average number of vacancies in spheres of fixed radius. The calculated results are compared with experimental data on damage accumulation in β-Ga₂O₃ under irradiation with aforementioned ions. It is shown that both methods qualitatively predict the effect of collision cascade density on radiation damage accumulation in gallium oxide. Fractal nature of cascades formed in β-Ga₂O₃ is established, corresponding fractal dimension is calculated.