S. O. Slipchenko, A. A. Podoskin, I. V. Shushkanov, V. A. Krychkov, A. E. Rizaev, M. I. Kondratov, A. E. Grishin, N. A. Pikhtin, T. A. Bagaev, V. N. Svetogorov, M. A. Ladugin, A. A. Marmalyuk, V. A. Simakov
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引用次数: 0
Abstract
A series of low-voltage thyristor current switches based on (Al)GaAs/GaAs homo- and heterostructures with a volume charge region formed in the lightly doped p-GaAs base layer have been developed. The transient processes characteristics in pulse generation mode of nanosecond duration have been studied. It has been shown that the use of a wide-bandgap barrier based on AlGaAs at the n‑emitter/p-base junction allows reducing the minimum control current amplitude from 30 to 3 mA, and the turn-on delay time can be shortened to 6 ns. For the developed thyristor switches, a minimum transition time of 3.7–3.9 ns was demonstrated when operating in a circuit with a 1 nF capacitive load. In a circuit with a nominal 1 Ω resistive load, the thyristor switches provided a peak current of 17.5 A with a pulse duration of 3.7 ns.
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Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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