阳极氢释放机制下的 MOS 结构分解模型

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030011

O. V. Aleksandrov

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引用次数: 0

摘要

摘要本文提出了栅介质相对较厚（10-100 nm）的 MOS 结构在阳极氢从相间边界 Si-SiO2 释放的机制下发生击穿的定量模型。击穿延迟时间由栅极介电质中氢离子的分散传输和积累决定。研究表明，在 MOS 结构中氢浓度较高且电场强度小于 ~10 MV/cm 的情况下，该模型能令人满意地描述击穿延迟时间，该时间明显短于 1/E 模型的预期时间。在较高的电场强度下，击穿由阳极空穴注入模型描述。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release

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Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release

Abstract

A quantitative model of the breakdown of MOS-structures with relatively thick (10–100 nm) gate dielectric by the mechanism of anode hydrogen release from interphase boundary Si-SiO₂ is proposed. The breakdown delay time is determined by dispersion transport and accumulation of hydrogen ions in the gate dielectric. It is shown that at a high concentration of hydrogen in MOS structures and electric field strength of less than ~10 MV/cm, the model satisfactorily describes breakdown delay times significantly shorter than those expected from the 1/E model. At higher field strengths, the breakdown is described by the anode hole injection model.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.