超晶格掺杂砷化镓单量子阱中的双子带磁电传输

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-09-04 DOI:10.1134/s1063782624030047

A. A. Bykov, D. V. Nomokonov, I. S. Strygin, I. V. Marchishin, A. K. Bakarov

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引用次数: 0

摘要

摘要研究了掺杂有 AlAs/GaAs 超晶格的 GaAs 单量子阱中准二维电子气体在 T = 4.2 K 的磁场 B < 2T 下的双能带磁传输。研究表明，施加负栅极电压会导致所研究的双子带电子系统转变为单子带系统。这种转变伴随着正磁阻的出现。传统的经典正磁阻模型对这种行为进行了描述，该模型考虑了电子的弹性带间散射。结合对经典正磁电阻和量子磁内带振荡的分析，可以确定带内散射的传输速率值和带间散射的量子速率值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping

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Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping

Abstract

Two-subband magnetotransport of quasi-2D electron gas in GaAs single quantum well with AlAs/GaAs superlattice doping has been studied at T = 4.2 K in magnetic fields B < 2T. It was demonstrated that application of negative gate voltage leads to transformation of studied two-subband electron system into the one-subband system. This transformation is accompanied by appearance of positive magnetoresistance. This behavior has been described by conventional model of classical positive magnetoresistance that takes into account elastic intersubband scattering of electrons. Combined analysis of classical positive magnetoresistance and quantum magneto-intersubband oscillations makes it possible to define the values of transport rates of intrasubband scattering and quantum rate of intersubband scattering.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.