Top-Down Formation of Biocompatible SiC Nanotubes

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER
A. D. Bouravleuv, A. N. Kazakin, Yu. A. Nashchekina, A. V. Nashchekin, E. V. Ubyyvovk, V. A. Astrahanceva, A. V. Osipov, G. V. Svyatec, S. A. Kukushkin
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引用次数: 0

Abstract

It was found that the synthesis of silicon carbide epitaxial layers on silicon by coordinated substitution of atoms can be accompanied by the formation of silicon carbide nanotubes growing deep into silicon substrates. That is, for the first time discovered a new “top-down” mechanism for the formation of silicon carbide nanotubes.

Abstract Image

自上而下形成生物相容性碳化硅纳米管
摘要 研究发现,通过原子的配位置换在硅上合成碳化硅外延层的同时,可以形成碳化硅纳米管,并向硅衬底深处生长。也就是说,首次发现了一种 "自上而下 "形成碳化硅纳米管的新机制。
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来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
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