18th International Symposium on VLSI Design and Test最新文献

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Design of a fault tolerant low-order interleaved memory based on the concept of bubble-stack an image storage perspective 基于气泡堆栈的低阶交错容错存储器设计
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881087
Somak R. Das, Sowvik Dey
{"title":"Design of a fault tolerant low-order interleaved memory based on the concept of bubble-stack an image storage perspective","authors":"Somak R. Das, Sowvik Dey","doi":"10.1109/ISVDAT.2014.6881087","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881087","url":null,"abstract":"Memory access rates have been the shortfall of modern computing systems with increasing processor speed. High speed processors do not perform as expected due to relative low data access rates of the concerned memory. Development of a memory system with higher accessing speed is therefore the need of hour. The concept of low-order interleaved memory systems with high throughput neutralises the speed gap between processor and memory. Interleaved memory systems can also be designed in a high-order fashion to make it fault tolerant. But, a fault tolerant high-order interleaved memory lacks the speed advantage. Therefore, designing a high speed low-order interleaved memory with properties of fault tolerance remained as a challenging area of research since decades. This paper proposes a design of low-order interleaved memory system which displays a high degree of fault tolerance without compromise in speed and storage space.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115328031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A thermal aware 3D IC partitioning technique 一种热感知的3D IC分区技术
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881069
Sabyasachee Banerjee, S. Majumder
{"title":"A thermal aware 3D IC partitioning technique","authors":"Sabyasachee Banerjee, S. Majumder","doi":"10.1109/ISVDAT.2014.6881069","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881069","url":null,"abstract":"On-chip power density plays a major role in case of Highperformance VLSI circuits. 3D chips have significantly larger power densities compared to their 2D counterparts due to increased scaling of technology and also increased number of components with higher frequency and bandwidth. The consumed power is usually converted into dissipated heat, affecting the performance and reliability of a chip. Thermal problems and limitations on inter-layer via (TSV) densities are important design constraints on three-dimensional integrated circuits (3D ICs). In this paper we introduce an algorithm where the modules with relatively high power densities are placed at the bottom layer and subsequently modules with relatively less power densities are placed on more higher layers. The temperatures of the layers vary in a non-increasing manner from the bottommost layer to the topmost layer to ensure efficient heat dissipation of the whole chip, which means we may require lesser number of heat TSVs to dissipate heat. Along with this thermal aware partitioning technique, we also tried to minimize the number of inter-layer vias (Signal TSVs) by swapping some modules across layers, in exchange of little increment in the area of the layer that has the maximum area in the circuitry. The experimental results we got are quite encouraging.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121116810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Layout-aware signal selection in reconfigurable architectures 可重构结构中感知布局的信号选择
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881078
Prateek Thakyal, P. Mishra
{"title":"Layout-aware signal selection in reconfigurable architectures","authors":"Prateek Thakyal, P. Mishra","doi":"10.1109/ISVDAT.2014.6881078","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881078","url":null,"abstract":"Post-silicon validation is an important and increasingly complex task in SoC design methodology. One of the major challenges in post-silicon debug is the limited observability of internal signals. Existing signal selection techniques try to maximize observability by selecting a small set of profitable trace signals. Unfortunately, these techniques do not consider design constraints such as routing congestion in reconfigurable architectures. In this paper, we propose a layout-aware signal selection algorithm that takes into account both observability and routing congestion in field-programmable gate array (FPGA). Our experimental results demonstrate that our approach can tradeoff between observability and wire-length reduction in FPGA-based designs.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"333 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127575956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
250mA ultra low drop out regulator with high slew rate double recycling folded cascode error amplifier 250mA超低差调节器,高摆压率双循环折叠级联误差放大器
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881067
S. Patri, S. Alapati, S. Chowdary, K. Prasad
{"title":"250mA ultra low drop out regulator with high slew rate double recycling folded cascode error amplifier","authors":"S. Patri, S. Alapati, S. Chowdary, K. Prasad","doi":"10.1109/ISVDAT.2014.6881067","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881067","url":null,"abstract":"This paper presents a modified folded cascode error amplifier of low dropout (LDO) regulator and a compensation scheme to improve the transient response. The proposed error amplifier enhances its transconductance, gain, and slew rate by recycling the shunt current sources of conventional folded cascode amplifier without increasing area or power consumption. The design is implemented in a standard UMC 0.18μm CMOS process. The LDO regulator consumes a quiescent current of 34μAonly. Simulation results show that the overshoot/undershoot in the output voltage under the extreme load transients are 177.7mV/139mVfor load current range of 0.5mA to 250mA with an output capacitor of 1pF. The LDO presented is useful for chip level power management suitable for SoC applications.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130668857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
All optical implementation of Mach-Zehnder interferometer based reversible sequential circuit 基于可逆顺序电路的Mach-Zehnder干涉仪全光学实现
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881079
P. Dutta, Chandan Bandyopadhyay, H. Rahaman
{"title":"All optical implementation of Mach-Zehnder interferometer based reversible sequential circuit","authors":"P. Dutta, Chandan Bandyopadhyay, H. Rahaman","doi":"10.1109/ISVDAT.2014.6881079","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881079","url":null,"abstract":"In this work, we present all optical reversible implementation of Flip-Flops using semiconductor optical amplifier (SOA) based Mach-Zehnder interferometer (MZI) switches. Improved design of MZI-based functionally reversible RS, D, JK, T and three different implementations of all optical functionally reversible MZI-based Master-Slave Flip-Flop using RS, D and JK Flip-Flop are presented. Detailed analysis and design complexities of all the functionally reversible optical Flip-Flops with improved optical costs have been reported.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133071507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design of tunnel FET based low power digital circuits 基于隧道场效应管的低功耗数字电路设计
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881075
A. Kamal, Bindu Boby
{"title":"Design of tunnel FET based low power digital circuits","authors":"A. Kamal, Bindu Boby","doi":"10.1109/ISVDAT.2014.6881075","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881075","url":null,"abstract":"Tunnel FET (TFET) having lesser leakage current and sub-threshold slope than MOSFET which works on the principle of band-to-band tunneling is found to be a potential candidate for ultra low power electronic applications. However, it is important to analyze how these devices behave better than conventional MOSFETs in analog and digital circuits. As TFETs are now in research side, built-in models for the devices are not available in circuit simulators and thus it is not possible to simulate TFET based circuits. This work aims to include a physics-based analytical model of TFET in Cadence Design framework using Verilog-A and to design and simulate digital circuits using the integrated model. A library is created in Cadence which includes all basic logic gates based on TFET using which full adder and parity checker circuits are realized.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133326871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Tunnel FET based low voltage static vs dynamic logic families for energy efficiency 基于隧道场效应管的低电压静态与动态逻辑系列的能源效率
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881042
K. Subramanyam, Sadulla Shaik, R. Vaddi
{"title":"Tunnel FET based low voltage static vs dynamic logic families for energy efficiency","authors":"K. Subramanyam, Sadulla Shaik, R. Vaddi","doi":"10.1109/ISVDAT.2014.6881042","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881042","url":null,"abstract":"Tunnel FETs as steep slope devices have attracted attention for achieving energy efficiency at low supply voltages. This paper presents the design of Hetero-junction Tunnel FET (HTFET) based logic gates for static and dynamic logic topologies for the first time. Comparison is also done with 20nm Si FinFET technology with supply voltage scaling. Due to the steep slope characteristics, HTFET topologies have improved energy efficiency in comparison to Si FinFET configurations. It has been observed that HTFET static logic gate (two input NAND) is ~60% more energy efficient then Si FinFET static logic gate. One of the key findings from this work is that HTFET dynamic logic gates outperform HTFET static gates and FinFET designs in terms of energy efficiency due to HTFET's steep slope, low static power and reduced delay values. The HTFET dynamic logic gate has ~65% less energy consumption than HTFET static NAND gate and ~56% less energy consumption than FinFET dynamic NAND gate at Vdd=0.2V.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"05 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129024427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 32×32 CMOS image sensor: Tested using process and temperature compensated voltage controlled current source 一种32×32 CMOS图像传感器:使用工艺和温度补偿电压控制电流源进行测试
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881073
P. Kumar, M. Seenivasan
{"title":"A 32×32 CMOS image sensor: Tested using process and temperature compensated voltage controlled current source","authors":"P. Kumar, M. Seenivasan","doi":"10.1109/ISVDAT.2014.6881073","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881073","url":null,"abstract":"A 32×32 CMOS image sensor is presented. Sensor uses adaptive integration time for every pixel. By cyclically selecting the row, the brighter pixel value is marked and readout first. The dimmer pixel continued to be integrated until its value falls under window defined by two threshold values. To increase throughput and hence to reduce roll time, multiple channels are being used. A PT compensated voltage controlled current source is designed to mimic the behavior of photodiode and the entire sensor was tested. The designed current source produces 1pA to 510pA of current in order to characterize the photodiode of type n+/p substrate of size 5μm×3μm. The current source with a nominal current of 260pA shows a standard deviation of 21.4% and temperature variation of 609 ppm/°C. Entire design is carried out in 1P6M, 180nm standard CMOS process. The designed image sensor used for star tracking.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114687286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Particle Swarm Optimization guided multi-frequency power-aware System-on-Chip test scheduling using window-based peak power model 基于窗口峰值功率模型的粒子群算法指导多频功耗感知的片上系统测试调度
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881089
R. Karmakar, Aditya Agarwal, S. Chattopadhyay
{"title":"Particle Swarm Optimization guided multi-frequency power-aware System-on-Chip test scheduling using window-based peak power model","authors":"R. Karmakar, Aditya Agarwal, S. Chattopadhyay","doi":"10.1109/ISVDAT.2014.6881089","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881089","url":null,"abstract":"This paper presents a multi-frequency test scheduling strategy for System-on-chip (SoC) under power constraint. While existing approaches consider either global peak or cycle-accurate power model, the proposed work considers an intermediate approach to reduce the power overestimation of global peak power model as well as the computational complexity of cycle-accurate power model. A Particle Swarm Optimization (PSO) guided test scheduling strategy has been integrated with our new window-based peak power model to reduce Test Application Time (TAT) over global peak power model. Experimental results show that further improvement in TAT can be achieved using multi-frequency test environment over single-frequency test approach.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128093002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors 高q变宽变间距、平面和三维堆叠螺旋电感的设计与建模
18th International Symposium on VLSI Design and Test Pub Date : 2014-07-16 DOI: 10.1109/ISVDAT.2014.6881053
R. Manikandan, V. Vanukuru, A. Chakravorty, B. Amrutur
{"title":"Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors","authors":"R. Manikandan, V. Vanukuru, A. Chakravorty, B. Amrutur","doi":"10.1109/ISVDAT.2014.6881053","DOIUrl":"https://doi.org/10.1109/ISVDAT.2014.6881053","url":null,"abstract":"Layout optimized planar spiral inductors using variable width (W) and spacing (S) across their turns are known to exhibit higher quality factors (Q). In this paper, we explore the performance improvement of 3-dimensional, series-stacked, parallel-stacked, single ended, and symmetric inductor configurations with variable W&S across their turns. Parameterized cells for the aforementioned complex variable W&S inductor structures are developed in cadence using SKILL scripts for automatic generation of optimized inductor layouts with improved quality factors. The analyzed standard (constant W&S) and layout optimized (variable W&S) inductors are fabricated in a 0.18 μm silicon on insulator process. Measurement results show more than 20% improvement in quality factor for the 3-D stacked variable W&S inductor topologies. Furthermore, an accurate, scalable, and broadband compact inductor model was developed and is shown to capture the improved Q characteristics across the analyzed inductor topologies. A complementary LC-tank voltage controlled oscillator with layout optimized inductors, operating over 2.4-2.5 GHz frequency range was simulated using these developed compact models and is shown to exhibit an improved phase noise characteristics with better figure of merit.","PeriodicalId":217280,"journal":{"name":"18th International Symposium on VLSI Design and Test","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122506167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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